SF61
THRU
SF68
6.0 AMP SUPER FAST RECTIFIERS
VOLTAGE RANGE
50 to 600 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Good for switching mode application
6.0 Amperes
DO-27
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.10 grams
.375(9.5)
.285(7.2)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 6.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
SF61
50
35
50
SF62
100
70
100
SF63
150
105
150
SF64
200
140
200
6.0
150
SF65
300
210
300
SF66
400
280
400
SF68
600
420
600
UNITS
V
V
V
A
A
V
μA
μA
nS
pF
C
0.95
5.0
50
35
50
-65 +150
1.25
1.70
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
RATING AND CHARACTERISTIC CURVES (SF61 THRU SF68)
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
trr
+0.5A
|
|
|
|
|
|
|
|
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
6
5
4
3
2
1
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
(+)
25Vdc
(approx.)
( )
1
Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,( C)
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
3.0
SF6
1~S
F6
4
REVERSE LEAKAGE CURRENT, (
μ
A)
10
10
3.0
1.0
Tj=100 C
SF
6 5~
1.0
SF
66
SF
68
0.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
Tj=25 C
0.1
.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
.01
0
20
40
60
80
100 120 140
FORWARD VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
FIG.6-TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
25
0
PEAK FORWARD SURGE CURRENT,(A)
120
90
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
60
30
0
1
5
10
50
100
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
Microchip MCU
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