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SB05-03C

Description
0.5 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size56KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB05-03C Overview

0.5 A, 30 V, SILICON, SIGNAL DIODE

SB05-03C Parametric

Parameter NameAttribute value
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current5 A
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.01 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Ordering number : EN3614A
Schottky Barrier Diode
SB05-03C
30V, 500mA Rectifier
Applications
• Universal-use rectifier.
• High frequency rectification (switching regulators, converters, choppers).
Features
• Low forward voltage (VF max=0.55V).
• Fast reverse recovery time (trr max=10ns).
• Low switching noise
• Low leakage current and high reliability due to highly reliable planar structure.
• Small-sized package, permitting applied sets to be compact and slim.
Absolute Maximum Ratings
at Ta=25°C
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse
Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
Io
IFSM
Tj
Tstg
30
35
500
5
–55 to +125
–55 to +125
min
30
typ
unit
V
V
mA
A
°C
°C
max
0.55
30
unit
V
V
µA
pF
ns
°C/W
50Hz sine wave, 1 cycle
Electrical Characteristics
at Ta=25°C
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : Q
VR
VF
IR
C
trr
Rthj-a
IR=150µA
IF=500mA
VR=15V
VR=10V, f=1MHz
IF=IR=100mA,
See specified Test Circuit.
16
10
560
trr Test Circuit
Package Dimensions
1148A
(unit : mm)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
61197GI/N120MH (KOTO) No.3614-1/2
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