SB02-09NP datasheet, PDF - EEWORLD Datasheet

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SB02-09NP: Description0.2 A, 90 V, SILICON, SIGNAL DIODE, TO-92; CategoryDiscrete semiconductor diode; File Size51KB，2 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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SB02-09NP Overview

0.2 A, 90 V, SILICON, SIGNAL DIODE, TO-92

SB02-09NP Parametric

Parameter Name	Attribute value
Maker	SANYO
Parts packaging code	TO-92
package instruction	O-XBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V
JEDEC-95 code	TO-92
JESD-30 code	O-XBCY-T3
Maximum non-repetitive peak forward current	5 A
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	0.2 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	CYLINDRICAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
Maximum reverse recovery time	0.01 µs
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM

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Ordering number :EN1924B

SB02-09NP

Shottky Barrier Diode

90V, 200mA Rectifier

Applications

· High frequency rectification (switching regulators,

converters, choppers).

Package Dimensions

unit:mm

1157A

[SB02-09NP]

Features

· Low forward voltage (VF max=0.7V).

· Fast reverse recorvery time (trr max=10ns).

· Low switching noise.

· Low leakage current and high reliability due to

highly reliable planar structure.

JEDEC:TO-92

EIAJ:SC-43

SANYO:NP

1:Anode

2:Cathode

3:No Contact

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Symbol

VRRM

VRSM

IFSM

Tstg

Conditions

Ratings

Unit

50Hz, resistive load, Ta=88˚C

50Hz sine wave, 1cycle

200

–55 to +125

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recorvery Time

Thermal Resistance

Symbol

trr

Rthj-a

IR=200µA

IF=200mA

VR=45V

VR=–10V, f=1MHz

IF=IR=10mA, See specified Test Circuit

165

Conditions

Ratings

min

0.7

typ

max

Unit

µA

˚C/W

ttr Test Circuit

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

33098HA (KT)/41096GI (KOTO)/2079MO/O255KI, TS No.1924-1/2

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