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SB0030-04A

Description
0.03 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SB0030-04A Overview

0.03 A, 40 V, SILICON, SIGNAL DIODE

Ordering number : EN5596A
SB0030-04A
Schottky Barrier Diode
40V, 30mA Rectifier
Applications
Small current rectification.
Package Dimensions
unit: mm
1114
[SB0030-04A]
Features
Glass-sleeve structure.
Facilitating high-density mounting.
Absolute Maximum Ratings
at Ta = 25 ˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Current
Junction Temperature
Storage Temperature
Symbol
V
RM
V
R
I
O
Tj
Tstg
Conditions
Ratings
40
40
30
125
–55 to +125
Unit
V
V
mA
˚C
˚C
Electrical Characteristics
Ta = 25 ˚C
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Symbol
V
F
I
R
C
T
I
F
=1 mA
V
R
=25 V
V
R
=1 V, f=1 MHz
2.0
Conditions
Ratings
min
typ
max
0.37
0.5
Unit
V
µA
pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
63097GI(KOTO) No.5596-1/2
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