BLM7G1822S-40AB_15 datasheet, PDF

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BLM7G1822S-40AB_15: DescriptionLDMOS 2-stage power MMIC; File Size288KB，19 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BLM7G1822S-40AB_15 Overview

LDMOS 2-stage power MMIC

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BLM7G1822S-40AB;

BLM7G1822S-40ABG

LDMOS 2-stage power MMIC

Rev. 1 — 10 July 2015

Product data sheet

1. Product profile

1.1 General description

The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using

NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited

as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz

to 2170 MHz frequency range. Available in gull wing or straight lead outline.

Table 1.

Performance

Typical RF performance at T

case

= 25



C; I

Dq1

= 20 mA; I

Dq2

= 76 mA for carrier section:

Dq1

= 40 mA and I

Dq2

= 120 mA for peaking section.

Test signal: 3GPP test model 1; single carrier W-CDMA; 64 DPCH; PAR = 9.9 dB at 0.01%

probability on CCDF; per section in a class-AB production circuit.

Test signal

single carrier W-CDMA

carrier section

peaking section

2167.5

31.5

25.5

26.5

37

38

(MHz)

(V)

L(AV)

(W)

(dB)



(%)

ACPR

(dBc)

1.2 Features and benefits



Designed for broadband operation (frequency 1805 MHz to 2170 MHz)

High section-to-section isolation enabling multiple combinations

High Doherty efficiency thanks to 2 : 1 asymmetry

Integrated temperature compensated bias

Biasing of individual stages is externally accessible

Integrated ESD protection

Excellent thermal stability

High power gain

On-chip matching for ease of use

Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications



RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency

range. Possible circuit topologies are the following as also depicted in

Section 8.1:



Asymmetric final stage in Doherty configuration



Asymmetric driver for high power Doherty amplifier

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