INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1352
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= -200V (Min)
·Complement
to Type 2SC3416
APPLICATIONS
·Designed
for color TV chroma output, high-voltage driver
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-200
V
V
CEO
Collector-Emitter Voltage
-200
V
V
EBO
Emitter-Base Voltage
-5.0
V
I
C
Collector Current-Continuous
-0.1
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
-0.2
A
1.2
W
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
5
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc website
：
www.iscsemi.cn
1
isc & iscsemi
is registered trademark
INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1352
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -10μ A; I
E
= 0
-200
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -1mA; R
BE
=
∞
-200
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -10μ A; I
C
= 0
-5
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= -20mA; I
B
= -2mA
-0.6
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= -20mA; I
B
= -2mA
-1.0
V
I
CBO
Collector Cutoff Current
V
CB
= -150V; I
E
= 0
-0.1
μ A
I
EBO
Emitter Cutoff Current
V
EB
= -4V; I
C
= 0
-0.1
μ A
h
FE
DC Current Gain
I
C
= -10mA ; V
CE
= -40V
40
320
f
T
Current-Gain—Bandwidth Product
I
C
= -10mA ; V
CE
= -30V
70
MHz
C
OB
Output Capacitance
I
E
= 0; V
CB
= -30V; f= 1.0MHz
1.7
pF
h
FE
Classifications
C
40-80
D
60-120
E
100-200
F
160-320
isc website
：
www.iscsemi.cn
2
isc & iscsemi
is registered trademark
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