ECH8693R datasheet, PDF - EEWORLD Datasheet

Ordering number : ENA2208A

ECH8693R

N-Channel Power MOSFET

24V, 14A, 7m

Ω

, Dual ECH8 Common Drain

Features

•

http://onsemi.com

Low ON-resistance

2.5V drive

Common-drain type

Protection diode in

•

Built-in gate protection resistor

Best suited for LiB charging and discharging switch

Halogen free compliance

Speciﬁcations

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

×0.8mm)

1unit

When mounted on ceramic substrate (900mm

×0.8mm)

2

Conditions

Ratings

24

±12.5

14

60

1.4

1.5

150

-

-55 to +150

Unit

V

A

W

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics

at Ta=25°C

Parameter

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

|

yfs

|

RDS(on)1

RDS(on)2

RDS(on)3

RDS(on)4

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

IS=14A, VGS=0V

VDS=10V, VGS=4.5V, ID=14A

See speciﬁed Test Circuit.

Conditions

ID=1mA, VGS=0V

VDS=20V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=5A

ID=5A, VGS=4.5V

ID=5A, VGS=4.0V

ID=5A, VGS=3.1V

ID=2.5A, VGS=2.5V

0.5

8

4.4

4.6

5.2

6

5.6

5.8

6.5

7.5

545

525

18650

22200

13

3

2.4

0.78

1.2

7

7.5

9.1

10.5

Ratings

min

24

1

±1

1.3

typ

max

Unit

V

μA

V

S

mΩ

ns

nC

V

Static Drain to Source On-State Resistance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet.

Semiconductor Components Industries, LLC, 2013

October, 2013

O1613 TKIM TC-00003055/90413 TKIM TC-00003016 No. A2208-1/5

ECH8693R

4.5V

2.5V

1.8V

14.0

ID -- VDS

=

V GS

V

1.5

11.0

10.0

9.0

ID -- VGS

VDS=10V

12.0

Drain Current, ID -- A

4.0V

3

.1V

Drain Current, ID -- A

10.0

8.0

7.0

6.0

5.0

8.0

4.0

3.0

2.0

Ta=75

°

C

0

0.5

1.0

4.0

2.0

1.0

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

25

°

C

1.5

--25

°

C

6.0

2.0

2.5

IT17162

Drain to Source Voltage, VDS -- V

20

IT17194

RDS(on) -- VGS

Gate to Source Voltage, VGS -- V

14

RDS(on) -- Ta

Ta=25

°

C

Static Drain to Source

On-State Resistance, RDS(on) -- m

Ω

Static Drain to Source

On-State Resistance, RDS(on) -- m

Ω

18

16

14

12

10

8

6

4

2

0

2

4

6

8

10

IT17195

12

10

5A

ID=2.5A

8

2.5

I =

.5V, D

=2

VGS

A

=5A

, ID

V

3.1

S=

VG

6

=

VGS

=5A

V, I D

4.0

4

5A

, I D=

=4.5V

V GS

2

0

--60

--40

--20

0

20

40

60

80

100

120

140

160

Gate to Source Voltage, VGS -- V

3

2

Ambient Temperature, Ta --

°

C

100K

7

5

IT17196

IS -- VSD

VGS=0V

Switching Time, S/W Time -- ns

S/W Time -- ID

td (off)

Forward Source Current, IS -- A

10

7

5

3

2

1.0

7

5

3

2

0.1

7

5

3

2

0.01

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

IT17165

VDD=10V

VGS=4.5V

3

2

10K

7

5

3

2

1K

7

5

3

2

100

0.1

2

3

5

7

tf

Ta=

75

°

C

25

°

C

--25

°

C

td(on)

tr

1.0

2

3

5

7

10

Forward Source to Drain Voltage, VSD -- V

4.5

4.0

Qg -- VGS

Source Current, IS -- A

2

100

7

5

3

2

IT17166

SOA

Gate to Source Voltage, VGS -- V

VDS=10V

ID=14A

Drain Current, ID -- A

IDP=60A(PW

≤

10μs)

ID=14A

μ

s

1m

s

100

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

2

4

6

8

10

12

14

IT17202

10

7

5

3

2

1.0

7

5

3

2

DC

Operation in this

area is limited by RDS(on).

op

10

ms

10

0m

s

era

tio

n

0.1

7

Ta=25

°

C

5

Single pulse

3

2

When mounted on ceramic substrate

2

0.01

(900mm

×0.8mm)

1unit

0.01 2 3 5 7 0.1 2 3 5 7 1.0

2 3

5 7 10

2 3

Total Gate Charge, Qg -- nC

Drain to Source Voltage, VDS -- V

5 7100

IT17197

No. A2208-2/5

ECH8693R

1.6

PD -- Ta

When mounted on ceramic substrate

(900mm

2

×0.8mm)

Allowable Power Dissipation, PD -- W

1.5

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

20

40

60

To

tal

Di

ss

ip

ati

1u

on

ni

t

80

100

120

140 150

IT17169

Ambient Temperature, Ta --

°

C

No. A2208-3/5

ECH8693R

Package Dimensions

ECH8693R-TL-W

SOT-28FL/ECH8

CASE 318BF

ISSUE O

Unit : mm

1: Source1

2: Gate1

3: Source2

4: Gate2

5: Drain

6: Drain

7: Drain

8: Drain

Land Pattern Example

0.4

0.6

2.8

0.65

Ordering & Package Information

Device

ECH8693R-TL-W

Package

ECH8

Shipping

3,000

pcs./reel

memo

Pb-Free

and

Halogen Free

PackingType: TL

Marking

UQ

TL

LOT No.

Electrical Connection

8

7

6

5

Switching Time Test Circuit

VIN

4.5V

0V

VIN

D

PW=10μs

D.C.≤1%

G

Rg

ID=7A

RL=1.4Ω

VOUT

VDD=10V

1

2

3

4

P.G

ECH8693R

50Ω

S

Rg=1kΩ

No. A2208-4/5

ECH8693R

Note on usage : Since the ECH8693R is a MOSFET product, please avoid using this device in the vicinity of

highly charged objects.

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

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warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical

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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in

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PS No. A2208-5/5

ECH8693R

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