, D
nc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
BTY79 SERIES
THYRISTORS
Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits (e.g.
light and motor control) and power switching systems.
The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to
1000R.
QUICK REFERENCE DATA
BTY79-400R
Repetitive peak voltages ^DRM^RRivl
Average on-state current
R. M.S. on-state current
Non-repetitive peak on-state current
max
-
500R
500
600R
600
'T(AV)
800 R
800
max
-
max
-
1000R
1000 V
1
^
A
400
'TfRMS)
'TSM
16 A
150 A
max.
MECHANICAL DATA
Fig. 1 TO-64: with 10-32 UNF stud
(<f>
4,83 mm).
Dimensions in mm
10-32 UNF=
t
483
0 9 3 max
±
• \
j
max
h
V-
3
A~i
—n n *
r
1.98 ^
max
.,'2w
r—
k(H)
^
35
max
•110-
1023
*
1 1 50
max
21 72
1072
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BTY79 SERIES
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Anode to cathode
Non-repetitive peak off-state voltage
e
(t<10ms)
Non-repetitive peak reverse voltage
(t<5ms)
Repetitive peak voltages
Crest working voltages
BTY79-400R
500R
600R
800 R
1000R
1100
960
800
800
VDSM*
*
V
RSM
max.
max.
max.
max.
500
500
400
400
1100
600
500
500
1100
720
600
600
1100 V
1100 V
1000 V
1000 V*
V
DRM/
V
RRM
V
DWM/
V
RWM
Average on-state current (averaged over
any 20 ms period) up to T
mD
= 85 °C
R.M.S. on-state current
Repetitive peak on-state current
Non-repetitive peak on-state current; t = 10 ms;
half sine-wave; Tj = 125 °C prior to surge;
withreapplied VRWMmax
I
2
1 for fusing (t= 10 ms)
Rate of rise of on-state current after triggering with
I
G
= 150 mA to IT - 30 A; dl
G
/dt = 0,25 A/MS
Gate to cathode
Average power dissipation (averaged over any 20 ms period)
Peak power dissipation
Temperatures
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
with heatsink compound
From junction to ambient in free air
Transient thermal impedance (t = 1 ms)
'T(AV)
'T(RMS)
max
-
1
°
A
max.
max
-
16 A
'TRM
'TSM
l
j
t
75 A
150 A
112 A
2
s
50 A/MS
max
-
max.
max.
dlj/dt
P
G(AV)
max.
max.
0,5 W
5 W
PGM
T
stg
-55 to +125 °C
max.
125 °C
Ti
R
thj-mb
1,8 °C/W
0,5 °C/W
45 °C/W
0,1 °C/W
R
th
R
th
mb-h
j-a
Ztfi j-mb
BTY79 SERIES
CHARACTERISTICS
Anode to cathode
On-state voltage (measured under pulse conditions)
l
T
= 2 0 A ; T j = 25°C
Rate of rise of off-state voltage that will not
trigger any device; exponential method;
V
D
= 2/3V
D R M m a x
;Tj=125°C
Reverse current
V
dV
D
/dt
200
3
3
150
75
V/MS
mA
mA
mA
mA
"R
Off-state cu rrent
VD = V
D W M m a x
;Tj-125°C
Latching current; Tj = 25 °C
Holding current; Tj = 25 °C
Gate to cathode
Voltage that will trigger all devices
Vo = 6 V ; T j = 25°C
Voltage that will not trigger any device
VD = V
D R M m a x
;Tj=125°C
Current that will trigger all devices
V
D
= 6 V;Tj = 25°C
On request (see Ordering Note)
Switching characteristics
Gate-controlled turn-on time (t
gt
= td + t
r
) when
switched from V
D
= V
DRMmax
to I
T
« 40 A;
I
GT
= 100 mA; dl
G
/dt = 5 A/MS; Tj = 25 °C
Circuit-commutated turn-off time when switched
from I y = 40 A to VR > 50 V with
-dl-r/dt = 10 A/MS; dV
D
/dt = 50 V/MS; Tj = 1 15 °C
ID
IL
'H
VGT
VGD
'GT
'GT
1.5
200
30
20
V
mV
mA
mA
*9t
typ,
2
MS
typ.
35
jig.2a Gate-controlled turn-on
1
time definition.
Fig.2b Circuit-commutated turn-off
time definition.
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