SM15T
Transil™
Features
■
Peak pulse power:
– 1500 W (10/1000 µs)
– 10 kW (8/20 µs)
Breakdown voltage range: from 6.8 V to 220 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j max
: 150 °C
High power capability at T
jmax
:
– 1250 W (10/1000 µs)
JEDEC registered package outline
K
Unidirectional
Bidirectional
■
■
■
A
■
■
■
SMC
(JEDEC DO-214AB)
Complies with the following standards
■
IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
IEC 61000-4-5
– See
Table 3
for surge level
MIL STD 883G, method 3015-7: class 3B
– 25 kV HBM (human body model)
UL 497B file number: QVGQ2.E136224
Resin meets UL 94, V0
MIL-STD-750, method 2026 soldererabilty
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
Description
The SM15T Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 1500 W (10/1000 µs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SM15T are packaged in SMC (SMC footprint in
accordance with IPC 7531 standard).
■
■
■
■
■
■
■
TM: Transil is a trademark of STMicroelectronics
September 2009
Doc ID 3080 Rev 6
1/10
www.st.com
10
Characteristics
SM15T
1
Table 1.
Symbol
P
PP
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25
°C
)
Parameter
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j initial
= T
amb
Value
1500
-65 to + 150
-55 to + 150
260
Unit
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal parameter
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
15
90
Unit
°C/W
°C/W
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
%I
PP
100
50
Pulse waveform
tr = rise time (µs)
tp = pulse duration time (µs)
0
tr
tp
t
2/10
Doc ID 3080 Rev 6
SM15T
Table 3.
Electrical characteristics, parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
Order code
25 °C 85 °C
µA
SM15T6V8A/CA
SM15T7V5A/CA
SM15T10A/CA
SM15T12A/CA
SM15T15A/CA
SM15T18A/CA
SM15T22A/CA
SM15T24A/CA
SM15T27A/CA
SM15T30A/CA
SM15T33A/CA
SM15T36A/CA
SM15T39A/CA
SM15T68A/CA
SM15T75A/CA
SM15T100A/CA
SM15T150A/CA
SM15T200A/CA
SM15T220A/CA
500
250
10
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
2000
1000
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Characteristics
V
BR
@I
R (1)
R
D
V
CL
@I
PP
10/1000
10/1000 µs
µs
max
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
CL
@I
PP
8/20 µs
max
R
D
8/20
µs
αT
(2)
min typ max
V
5.8
6.4
8.55
max
A
(4)
746
690
538
461
368
308
254
234
207
187
169
156
143
83
75
56
38
28
26
V
6.45 6.8 7.14
7.13 7.5 7.88
9.5
10
12
15
18
22
24
27
30
33
36
39
68
75
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
78.8
V
(3)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92
103
137
207
274
328
A
(4)
143
132
103
90
71
59.5
49
45
40
36
33
30
28
16.3
14.6
11
7.2
5.5
4.6
Ω
0.023
0.026
0.039
0.046
0.076
0.106
0.153
0.178
0.228
0.278
0.333
0.403
0.461
1.26
1.66
2.91
6.81
11.6
21.1
V
(3)
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
134
178
265
353
388
Ω
0.008
0.010
0.015
0.020
0.031
0.044
0.064
0.075
0.096
0.12
0.14
0.17
0.20
0.60
0.74
1.30
2.82
5.11
6.04
10-4/ °C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.5
10.6
10.8
10.8
10.8
10.2 11.4
12.8 14.3
15.3 17.1
18.8 20.9
20.5 22.8
23.1 25.7
25.6 28.5
28.2 31.4
30.8 34.2
33.3 37.1
58.1 64.6
64.1 71.3
85.5 95.0 100 105
128
171
188
143 150 158
190 200 210
209 220 231
1. Pulse test : t
p
< 50 ms
2. To calculate V
BR
versus junction temperature, use the following formula: V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25)).
3. To calculate maximum clamping voltage at other surge level, use the following formula: V
CL
= R
D
x I
PP
+ V
BRmax.
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 3080 Rev 6
3/10
Characteristics
SM15T
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
(printed circuit board)
Figure 4.
Peak pulse power versus
exponential pulse duration
P
pp
(W)
2000
10/1000 µs
P
PP
(kW)
100.0
T
j
initial = 25 °C
1500
10.0
1000
1.0
500
T
j
(°C)
0
0
25
50
75
100
125
150
175
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
t
p
(ms)
Figure 5.
Clamping voltage versus peak pulse current (maximum values)
IPP (A)
1000.0
T j initial=25 °C
SM15T 10A
100.0
SM15T 6V8A
SM15T 30A
8/20 µs
SM15T 22A
10.0
10/1000 µs
SM15T 68A
SM15T 150A
1.0
10 ms
SM15T 220A
VCL (V)
0.1
1
10
100
1000
4/10
Doc ID 3080 Rev 6
SM15T
Characteristics
Figure 6.
Capacitance versus reverse applied Figure 7.
voltage (typical values, SM15TxxA)
C (nF)
10.0
SM15T6V8A
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
Capacitance versus reverse applied
voltage (typical values,
SM15TxxCA)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
C (nF)
10.00
SM15T6V8CA
SM15T15A
1.00
SM15T30A
SM15T15CA
1.0
SM15T68A
SM15T30CA
0.10
SM15T200A
SM15T68CA
V
R
(V)
0.01
1
10
100
1000
0.1
1
V
R
(V)
10
100
SM15T200CA
1000
Figure 8.
Peak forward voltage drop versus
forward current (typical values)
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
I
FM
(A)
100.0
Z
th(j-a)
/ R
th(j-a)
1.00
Recommended pad layout
10.0
T
j
=125 °C
0.10
T
j
=25 °C
1.0
V
FM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.01
1.0E-03
1.0E-02
1.0E-01
t
P
(s)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
100
90
80
70
60
50
40
30
Figure 11. Leakage current versus junction
temperature (typical values)
I R(nA)
1.0E+04
R th (j -a) (°C/ W)
printed circuit board FR4,
copper thickness = 35 µm
1.0E+03
V
R
=V
RM
V
RM
< 10 V
1.0E+02
1.0E+01
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S Cu (cm²)
1.0E+00
25
50
V
R
=V
RM
V
RM
≥
10 V
T
j
(°C)
100
125
150
75
Doc ID 3080 Rev 6
5/10
京公网安备 11010802033920号
EEWORLD
