AUTOMOTIVE GRADE
PD - 96325
Features
l
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HEXFET
®
Power MOSFET
D
AUIRFB4610
AUIRFS4610
100V
11m
:
14m
:
73A
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
V
(BR)DSS
R
DS(on)
typ.
max.
I
D
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D
G
D
S
G
D
S
TO-220AB
AUIRFB4610
D
2
Pak
AUIRFS4610
G
D
S
Gate
Absolute Maximum Ratings
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dV/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
73
52
290
190
1.3
± 20
370
See Fig. 14, 15, 16a, 16b,
7.6
-55 to + 175
300
10lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
f
Ã
d
e
x
x
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
j
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF/B/S4610
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
–––
–––
2.0
73
–––
–––
–––
–––
–––
––– –––
0.085 –––
11
14
–––
4.0
––– –––
1.5
–––
–––
20
––– 250
––– 200
––– -200
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 44A
V V
DS
= V
GS
, I
D
= 100µA
S V
DS
= 50V, I
D
= 44A
Ω
f = 1MHz, open drain
V
DS
= 100V, V
GS
= 0V
µA
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Effective Output Capacitance (Energy Related) –––
–––
Effective Output Capacitance (Time Related)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
90
20
36
18
87
53
70
3550
260
150
330
380
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 44A
V
DS
= 80V
V
GS
= 10V
V
DD
= 65V
I
D
= 44A
R
G
= 5.6Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
f
f
ns
pF
h
, See Fig.11
g
D
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
73
A
290
Conditions
MOSFET symbol
showing the
integral reverse
G
S
Ã
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
––– –––
1.3
V T
J
= 25°C, I
S
= 44A, V
GS
= 0V
T
J
= 25°C
V
R
= 85V,
–––
35
53
ns
T
J
= 125°C
I
F
= 44A
–––
42
63
di/dt = 100A/µs
T
J
= 25°C
–––
44
66
nC
T
J
= 125°C
–––
65
98
–––
2.1
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.39mH
R
G
= 25Ω, I
AS
= 44A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
44A, di/dt
≤
660A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
2
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AUIRF/B/S4610
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220AB
D PAK
2
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
N/A
MSL1
Class M4(400V)
(per AEC-Q101-002)
Class H1C(2000V)
(per AEC-Q101-001)
Class C3 (750V)
(per AEC-Q101-005)
Yes
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF/B/S4610
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
100.0
2.5
ID = 73A
VGS = 10V
TJ = 175°C
10.0
2.0
1.5
1.0
TJ = 25°C
VDS = 25V
≤
60µs PULSE WIDTH
1.0
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
6000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 44A
VDS = 80V
VDS= 50V
VDS= 20V
5000
16
C, Capacitance (pF)
Ciss
12
3000
8
2000
4
1000
Coss
Crss
1
10
100
0
0
0
20
40
60
80
100
120
140
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRF/B/S4610
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
TJ = 175°C
100
10.0
10
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
TJ = 25°C
1.0
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
DC
10
100
1000
0.1
1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
80
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
125
ID , Drain Current (A)
60
120
115
40
110
20
105
0
25
50
75
100
125
150
175
100
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
1600
1.5
1200
I D
TOP
4.6A
6.3A
BOTTOM
44A
Energy (µJ)
1.0
800
0.5
400
0.0
0
20
40
60
80
100
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
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