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SUM110P04-04L

Description
P-Channel 40-V (D-S) 175-LC MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size52KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SUM110P04-04L Overview

P-Channel 40-V (D-S) 175-LC MOSFET

SUM110P04-04L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)110 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)375 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
SUM110P04-04L
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
−40
FEATURES
I
D
(A)
d
D
TrenchFETr Power MOSFET
D
New Package with Low Thermal Resistance
r
DS(on)
(W)
0.0042 @ V
GS
=
−10
V
0.0062 @ V
GS
=
−4.5
V
−110
−110
APPLICATIONS
D
Automotive
12-V Boardnet
High-Side Switches
Motor Drives
S
TO-263
G
G
D S
Top View
D
Ordering Information: SUM110P04-04L
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
d
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
b
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
−40
"20
−110
−110
−240
−75
281
375
c
3.75
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mount
b
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
_C/W
1
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