Not for new design, this product will be obsoleted soon
S594T / S594TR / S594TRW
Vishay Semiconductors
MOSMIC
®
for TV-Tuner Prestage with 5 V Supply Voltage
2
1
Comments
MOSMIC
-
MOS Monolithic Integrated Circuit
SOT143
Features
•
•
•
•
•
•
•
•
•
Integrated gate protection diodes
Low noise figure
e3
High gain
Biasing network on chip
Improved cross modulation at gain reduction
High AGC-range
SMD package
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
4
2
SOT143R
4
1
3
2
SOT343R
4
3
Electrostatic sensitive device.
Observe precautions for handling.
19216
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Mechanical Data
Typ:
S594T
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
S594TR
Case:
SOT-143R Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
S594TRW
Case:
SOT-343R Plastic case
Weight:
approx. 6.0 mg
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
C block
AGC
RF in
C block
G2
G1
S
D
RFC
V
DD
(V
DS
)
RF out
C block
94 9296
Parts Table
Part
S594T
S594TR
S594TRW
594
94R
W94
Marking
SOT-143
SOT-143R
SOT-343R
Package
Document Number 85048
Rev. 1.6, 08-Sep-08
www.vishay.com
1
S594T / S594TR / S594TRW
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
DS
I
D
± I
G1/G2SM
± V
G1/G2SM
P
tot
T
Ch
T
stg
Value
8
20
10
6
160
150
- 55 to + 150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Parameter
Channel ambient
1)
1)
Test condition
Symbol
R
thChA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μm
Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Test condition
Symbol
Min
7
7
Typ.
Max
10
10
50
100
20
50
7
10
1.0
500
14
Unit
V
V
μA
μA
nA
μA
mA
V
± I
G1S
= 10 mA, V
G2S
= V
DS
= 0 ± V
(BR)G1SS
± I
G2S
= 10 mA, V
G1S
= V
DS
= 0 ± V
(BR)G2SS
+ I
G1SS
- I
G1SS
± I
G2SS
I
DSS
I
DSP
V
G2S(OFF)
Gate 1 - source leakage current + V
G1S
= 5 V, V
G2S
= V
DS
= 0
- V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2 - source leakage current ±V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
Self-biased operating current
Gate 2 - source cut-off voltage
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
V
DS
= 5 V, V
G1S
= nc, I
D
= 20
μA
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 kΩ collector resistor.
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
V
DS
= 5 V, V
G2S
= 4 V, I
D
= I
DSP
, f = 1 MHz
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
G
S
= 3,3 mS, G
L
= 1 mS,
f = 800 MHz
Test condition
Symbol
|y
21s
|
C
issg1
C
rss
C
oss
G
ps
G
ps
16.5
Min
20
Typ.
24
2.1
20
0.9
26
20
Max
28
2.5
Unit
mS
pF
fF
pF
dB
dB
www.vishay.com
2
Document Number 85048
Rev. 1.6, 08-Sep-08
S594T / S594TR / S594TRW
Vishay Semiconductors
Parameter
AGC range
Noise figure
Test condition
V
DS
= 5 V, V
G2S
= 1 to 4 V,
f = 800 MHz
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS,
f = 800 MHz
Symbol
ΔG
ps
F
F
Min
40
1
1.3
Typ.
Max
Unit
dB
dB
dB
Common Emitter S-Parameters
f/MHz
LOG
MAG
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
-0.02
-0.04
-0.11
-0.19
-0.30
-0.39
-0.54
-0.67
-0.82
-0.98
-1.14
-1.30
-1.44
-1.58
-1.74
-1.91
-2.02
-2.16
-2.28
-2.43
-2.57
-2.74
-2.81
-2.93
-3.06
-3.16
S11
ANG
deg
-4.1
-7.9
-11.6
-15.5
-19.6
-22.9
-26.6
-30.0
-33.3
-36.7
-39.8
-43.2
-46.1
-49.2
-52.0
-54.9
-58.0
-61.0
-63.8
-66.6
-69.4
-72.4
-75.3
-78.0
-80.8
-83.8
7.63
7.56
7.47
7.36
7.20
7.06
6.84
6.67
6.44
6.26
6.07
5.81
5.62
5.43
5.22
5.01
4.86
4.68
4.53
4.29
4.12
3.93
3.85
3.74
3.63
3.47
LOG
MAG
S21
ANG
deg
174.7
169.0
162.5
156.7
150.3
145.2
139.3
133.9
128.7
123.5
118.7
113.4
109.3
104.4
100.0
95.5
91.2
86.8
82.6
78.4
73.8
69.9
65.7
62.0
57.8
53.4
-63.74
-57.38
-53.95
-51.68
-50.05
-48.69
-47.82
-47.15
-46.66
-46.39
-46.33
-46.34
-46.14
-46.17
-46.48
-46.65
-46.62
-46.43
-45.77
-45.10
-44.59
-44.05
-43.14
-42.24
-41.21
-40.03
LOG
MAG
S12
ANG
deg
88.0
85.8
82.9
80.5
78.0
76.6
74.8
73.6
72.8
72.1
72.0
74.4
76.3
78.6
81.7
87.0
93.4
102.1
110.0
114.9
119.4
126.3
132.1
138.1
143.1
146.5
-0.07
-0.09
-0.12
-0.15
-0.17
-0.22
-0.27
-0.29
-0.37
-0.44
-0.48
-0.55
-0.61
-0.66
-0.72
-0.78
-0.82
-0.86
-0.93
-1.01
-1.12
-1.18
-1.20
-1.23
-1.27
-1.39
LOG
MAG
S22
ANG
deg
-1.8
-3.4
-5.3
-6.9
-8.8
-10.4
-11.8
-13.6
-15.1
-16.8
-18.3
-19.8
-21.1
-22.5
-24.2
-25.5
-27.0
-28.7
-30.0
-31.4
-32.7
-34.2
-35.8
-37.3
-38.7
-40.1
Document Number 85048
Rev. 1.6, 08-Sep-08
www.vishay.com
3
S594T / S594TR / S594TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
y
21s
- Forward Transadmittance ( mS )
250
P - Total Power Dissipation ( mW )
tot
40
200
30
150
20
100
50
0
0
25
50
75
100
125
150
10
V
DS
= 5 V
f = 200 MHz
0
0
1
2
3
4
V
G2S
– Gate 2 Source Voltage ( V )
95 10765
T
amb
– Ambient Temperature (
°C
)
95 10768
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
C
issg1
– Gate 1 Input Capacitance ( pF )
20
4
I
D
– Drain Current ( mA
)
16
3
12
V
G2S
= 4 V
3V
2
8
2V
4
0
0
1
2
3
4
1V
5
1
V
DS
= 5 V
f = 200 MHz
0
0
1
2
3
4
5
6
V
G2S
– Gate 2 Source Voltage ( V )
95 10766
V
DS
– Drain Source Voltage ( V )
95 10769
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
20
C
oss
– Output Capacitance ( pF )
I
D
– Drain Current ( mA )
2
V
G2S
= 4 V
f = 200 MHz
1.5
16
12
1
8
4
V
DS
= 5 V
0
0
1
2
3
4
0.5
0
3
9511143
4
5
6
7
95 10767
V
G2S
– Gate 2 Source Voltage ( V )
V
DS
– Drain Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
www.vishay.com
4
Document Number 85048
Rev. 1.6, 08-Sep-08
S594T / S594TR / S594TRW
Vishay Semiconductors
20
- Transducer Gain ( dB )
S
21
2
0
-20
-40
V
DS
= 5 V
f = 800 MHz
-60
0
1
2
3
4
95 10770
V
G2S
– Gate 2 Source Voltage ( V )
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
80
CM – Cross Modulation ( dB )
P
in
= -20 dBm
60
40
20
V
DS
= 5 V
f = 800 MHz
0
2
3
4
5
6
95 11144
V
G2S
– Gate 2 Source Voltage ( V )
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
Document Number 85048
Rev. 1.6, 08-Sep-08
www.vishay.com
5
京公网安备 11010802033920号
EEWORLD
