INTEGRATED CIRCUITS
SA631
1GHz low voltage LNA and mixer
Product specification
IC17 Data Handbook
1998 Jan 08
Philips
Semiconductors
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
DESCRIPTION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than
±0.2dB
over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
PIN CONFIGURATION
PD1
PD2
GND
LO OUT
GND
GND
GND
GND
GND
1
2
3
4
5
6
7
8
9
20 MIXER OUT
19 MIXER OUT
18 GND
17 MIXER IN
16 GND
15 LNA IN
14 GND
13 LNA OUT
12 V
CC
11 GND
FEATURES
•
Low current consumption
•
Outstanding gain and noise figure
•
Excellent gain stability versus temperature and supply voltage
•
LNA and mixer power down capability
•
Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
GND 10
SR00124
Figure 1. Pin Configuration
•
900MHz cellular and cordless front-end
•
Spread spectrum receivers
•
RF data links
•
UHF frequency conversion
•
Portable radio
ORDERING INFORMATION
DESCRIPTION
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
TEMPERATURE RANGE
–40 to +85
°
C
ORDER CODE
SA631DK
DWG #
SOT266-1
BLOCK DIAGRAM
MIXER
OUT
MIXER
OUT
GND
MIXER
IN
GND
LNA
IN
GND
LNA
OUT
V
CC
GND
20
19
18
17
16
15
14
13
12
11
LNA
1
PD1
2
PD2
3
GND
4
LO
OUT
5
GND
6
GND
7
GND
8
GND
9
GND
10
GND
SR01588
Figure 2. SA631 Block Diagram
1998 Jan 08
2
853–2045 18847
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
IN
P
D
T
JMAX
P
MAX
T
STG
Supply voltage
1
Voltage applied to any other pin
Power dissipation, T
amb
= 25°C (still air)
2
20-Pin Plastic SSOP
Maximum operating junction temperature
Maximum power input/output
Storage temperature range
PARAMETER
RATING
–0.3 to +6
–0.3 to (V
CC
+ 0.3)
980
150
+20
–65 to +150
UNITS
V
V
mW
°C
dBm
°C
NOTES:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
JA
: 20-Pin SSOP = 110°C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
T
amb
T
J
Supply voltage
Operating ambient temperature range
Operating junction temperature
PARAMETER
RATING
2.7 to 5.5
–40 to +85
–40 to +105
UNITS
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
amb
= 25°C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
Full power-on
I
CC
Supply current
LNA powered-down
Full power-down
V
T
V
IH
V
IL
I
IL
I
IH
PD logic threshold voltage
Logic 1 level
Logic 0 level
PD1 input current
PD2 input current
Enable = 0.4V
Enable = 2.4V
1.2
2.0
–0.3
10
10
TYP
8.3
5.2
20
1.6
1.8
V
CC
0.8
MAX
mA
mA
µA
V
V
V
µA
µA
UNITS
1998 Jan 08
3
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
amb
= 25°C; RF
IN
= 881MHz, f
VCO
= 964MHz; unless otherwise stated.
LIMITS
SYMBOL
Low Noise Amplifier
f
RF
S
21
S
21
∆S
21
/∆T
∆S
21
/∆f
S
12
S
11
S
22
P
-1dB
IP3
NF
t
ON
t
OFF
Mixer
PG
C
S
11M
NF
M
P
-1dB
IP3
M
IP
2INT
P
RFM-IF
P
LO-IF
P
LO-RFM
P
LO-RF
Mixer power conversion gain: R
P
= R
L
= 1.2kΩ
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
RF
IN
= –32dBm
LO = –0dBm
f
RF
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
Ext. impedance matching req.
9.6
–10
10
–14.5
3.3
38
–45
–23
–32
–42
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
RF input frequency range
Amplifier gain
Amplifier gain in power-down mode
Gain temperature sensitivity enabled
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
Amplifier output match
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
Amplifier turn-on time (Enable Lo
→
Hi)
Amplifier turn-off time (Enable Hi
→
Lo)
800MHz - 1.0GHz
@ 881 MHz
With ext. impedance matching
800
15
–28
0.006
±0.013
–28
–10
–10
–20
–7
1.7
120
0.3
1000
MHz
dB
dB
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dB
µs
µs
PARAMETER
TEST CONDITIONS
–3s
TYP
+3s
UNITS
Overall System
G
SYS
System gain
LNA + Mixer
23.9
24.6
25.3
dB
1998 Jan 08
4
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 1. Power ON/OFF Control Logic
PD1
0
0
1 or open
1 or open
PD2
0
1 or open
0
1 or open
Full chip power-down
Mixer on, LNA power-down
Standby (bias on)
Full chip power-on (default)
IFOUT
C3
6.8pF
C16
10pF
C15
10pF
L1
560nH
L6
12nH
C2
10nF
C10
2.2pF
C1
100pF
L4
560n
L3
6.8nH
C11 10nF
C14
6.8pF
17
MIXER
IN
16
GND
15
LNA
IN
C8
10nF
C13
33pF
+
–
VCC
3V
C9
0.1µF
20
MIXER
OUT
19
MIXER
OUT
18
GND
14
GND
13
LNA
OUT
12
VCC
11
GND
SA631
PD1
1
PD2
2
GND
3
LOOUT
4
GND
5
GND
6
GND
7
GND
8
GND
9
GND
10
C12
100pF
VCOOUT
SR01589
Figure 3. SA631 Application Circuit
1998 Jan 08
5
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