RFUV1002
RFUV1002
9GHz TO 14GHz GaAs MMIC IQ
UP-CONVERTER
Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm
N/C GND
I
N/C N/C GND Q
N/C
32
N/C
31
30
29
28
27
26
25
24
Vc4
23
N/C
Features
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Vc3
0
90
GND
LO
IN
GND
N/C
N/C
N/C
V
LOA
1
RF Frequency, 9GHz to
14GHz
IF Frequency, DC to 4GHz
Maximum Conversion Gain,
23dB
Minimum Conversion Gain,
-15dB
Noise Figure (Maximum
Gain), 12dB
OIP3 (Maximum Gain),
+28dBm
Image Rejection, 20dBc
LO Leakage at RF Port, -
5dBm
Point to point
VSAT
22
V
LPA
1,2
21
Vc1
20
N/C
19
N/C
18
N/C
17
Vc2
V
LOA
2 V
MPA
N/C GND RF
OUT
GND N/C
PACKAGE
GND
Functional Block Diagram
Product Description
RFMD's RFUV1002 is a 9GHz to 14GHz GaAs pHEMT up-converter, incor-
porating an integrated LO buffer amplifier, a balanced single-side band
(image rejection) mixer followed by a variable gain amplifier and a DC
decoupling capacitor. The combination of high performance and low cost
packaging makes the RFUV1002 a cost effective solution, ideally suited to
both current and next generation Point-to-Point and VSAT applications.
RFUV1002 is packaged in a 5mmx5mm QFN to simplify both system level
board design and volume assembly.
Applications
Ordering Information
RFUV1002S2
RFUV1002SB
RFUV1002SQ
RFUV1002SR
RFUV1002TR7
RFUV1002TR13
RFUV1002PCK-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on a 7” reel
750 Pieces on a 7” reel
2500 Pieces on a 13” reel
Evaluation board with 2-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 17
RFUV1002
Absolute Maximum Ratings
Parameter
LPA Drain Voltage Vd
LOA Drain Voltage
RF Input Power
LO Input Power
T
OPER
T
STOR
ESD Human Body Model
Rating
6
6
15
15
-40 to +85
-65 to +150
Class 1A
Unit
V
V
dBm
dBm
C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
C
Parameter
RF Frequency
LO Frequency
IF Frequency
LO input Drive
Conversion Gain (Max.)
Conversion Gain (Min.)
NF (max. Gain)
NF (min. Gain)
OIP3 (max. Gain)
OIP3 (min. Gain)
Image Rejection
LO Leakage at RF-Port (Maximum Gain)
LO Return Loss
RF Return Loss
V
D
I
D
VVA
Specification
Min.
Typ.
Max.
9
5
DC
0
20
23
-15
12
17
25
9
15
28
14
20
-5
10
10
5
380
-3
500
0
5
14
18
4.0
Unit
GHz
GHz
GHz
dBm
dB
dB
dB
dB
dBm
dBm
dBc
dBm
dB
dB
V
mA
V
With IQ bias
Condition
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110908
RFUV1002
Typical Electrical Performance
Measurements performed with I and Q (IF) ports connected to an external 90° Hybrid, LO Power= 0dBm and IF =2.5GHz,
-10dBm, unless otherwise stated.
Max. Conversion Gain versus RF Frequency
Over Temperature (USB)
30
25
Max. Conversion Gain (dB)
20
15
10
25 C
5
0
85 C
40 C
9
10
11
Vc1=Vc2=Vc3=Vc4= 3V
VLPA1,2=VMPA=5V
VLOA1=VLOA2=5V
12
13
14
RF Frequency (GHz)
15
16
17
Min. Conversion Gain (dB)
0
5
10
15
20
25 C
25
30
85 C
40 C
9
10
11
12
13
14
RF Frequency (GHz)
15
16
17
Min. Conversion Gain versus RF Frequency
Over Temperature (USB)
Vc1=Vc2=Vc3=Vc4=0V
VLPA1,2=VMPA=5V
VLOA1=VLOA2=5V
Image Rejection versus RF Frequency
Over Temperature (USB)
60
50
Image Rejection (dBc)
40
30
20
25 C
10
0
85 C
40 C
9
10
11
Vc1=Vc2=Vc3=Vc4= 3V
VLPA1,2=VMPA=5V
VLOA1=VLOA2=5V
12
13
14
RF Frequency (GHz)
15
16
17
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RFUV1002
LSB Conversion Gain and Image Rejection
Max. Conversion Gain versus RF Frequency
Over Temperature (LSB)
30
25
Max. Conversion Gain (dB)
20
15
10
25 C
5
0
9
10
11
12
13
14
RF Frequency (GHz)
15
16
17
85 C
40 C
Vc1=Vc2=Vc3=Vc4= 3V
VLPA1,2=VMPA=5V
VLOA1=VLOA2=5V
Min. Conversion Gain (dB)
0
5
10
15
20
25 C
25
30
85 C
40 C
9
10
11
12
13
14
RF Frequency (GHz)
15
16
17
Min. Conversion Gain versus RF Frequency
Over Temperature (LSB)
Vc1=Vc2=Vc3=Vc4=0V
VLPA1,2=VMPA=5V
VLOA1=VLOA2=5V
Image Rejection versus RF Frequency
Over Temperature (LSB)
60
50
Image Rejection (dBc)
40
25 C
30
20
10
0
Vc1=Vc2=Vc3=Vc4= 3V
VLPA1,2=VMPA=5V
VLOA1=VLOA2=5V
9
10
11
12
13
14
RF Frequency (GHz)
15
16
17
85 C
40 C
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110908
RFUV1002
USB LO Leakage
LO Leakage versus LO Frequency
Over Temperature (USB 10GHz Band)
10
5
0
5
10
15
20
7
8
9
10
11
LO Frequency (GHz)
12
13
14
LO Leakage at RF Port (dBm)
10
5
0
5
10
15
20
I bias = 16mV
Q bias = 38mV
LO Leakage versus LO Frequency
Over Temperature (USB 11GHz Band)
LO Leakage at RF Port (dBm)
25 C
85 C
40 C
I bias = +7mV
Q bias = 16mV
25 C
85 C
40 C
7
8
9
10
11
LO Frequency (GHz)
12
13
14
LO Leakage versus LO Frequency
Over Temperature (USB 13GHz Band)
10
5
LO Leakage at RF Port (dBm)
0
5
10
15
20
I bias = 9mV
Q bias = 28mV
25 C
85 C
40 C
7
8
9
10
11
LO Frequency (GHz)
12
13
14
DS110908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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