NOT RECOMMENDED FOR NEW DESIGN
USE
DMP2075UFDB
DMP2060UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-20V
R
DS(ON) Max
90mΩ @ V
GS
= -4.5V
137mΩ @ V
GS
= -2.5V
I
D MAX
T
A
= +25°
C
-3.2A
-2.6A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize on-state resistance (R
DS(ON)
)
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe; Solderable per
MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6 (Type B)
S2
D2
D1
D2
G1
S1
Pin1
Bottom View
Q1 P-CHANNEL MOSFET
Q2 P-CHANNEL MOSFET
G2
D1
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP2060UFDB
-7
DMP2060UFDB
-13
Notes:
Case
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website athttps://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U-DFN2020-6 (Type B)
FD = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
DMP2060UFDB
Document number: DS37422 Rev. 3 - 3
1 of 7
www.diodes.com
December 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP2075UFDB
DMP2060UFDB
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
Value
-20
±12
-3.2
-2.5
-1.5
-18
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.4
2.2
92
55
30
-55 to +150
°
C
Unit
W
°
C/W
Electrical Characteristics P-CHANNEL
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-20
—
—
-0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
59
76
-0.65
881
84
67
14.3
11
18
1.5
2.3
5.0
9.5
29.7
20.4
23.6
11.4
Max
—
-1.0
±10
-1.4
90
137
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.5V, I
D
= -2.3A
V
GS
= 0V, I
S
= -3.0A
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -10V, I
D
= -3.7A
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 3.3Ω, R
g
= 1Ω
I
S
= -3.0A, dI/dt = 100A/μs
I
S
= -3.0A, dI/dt = 100A/μs
5. Device mounted on on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to product testing.
DMP2060UFDB
Document number: DS37422 Rev. 3 - 3
2 of 7
www.diodes.com
December 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP2075UFDB
15.0
V
GS
= -8.0V
DMP2060UFDB
15
V
DS
= -5.0V
12.0
V
GS
= -4.5V
V
GS
= -3.0V
V
GS
= -2.5V
V
GS
= -2.0V
12
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
9.0
V
GS
= -1.8V
9
6.0
V
GS
= -1.5V
6
3.0
3
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
0.0
0
1
2
3
4
V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.14
0.1
V
GS
= -4.5V
T
A
= 150
C
0.09
T
A
= 125
C
0.12
V
GS
= -2.5V
0.08
0.07
0.06
0.05
0.04
0.03
T
A
= 25
C
T
A
= 85
C
0.1
0.08
V
GS
= -4.5V
T
A
= -55
C
0.06
0.04
0
3
6
9
12
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
0
3
6
9
12
I
D
, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
15
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= -4.5V
I
D
= -2.9A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.12
1.4
0.1
V
GS
= -2.5V
I
D
= -2.3A
1.2
V
GS
= -2.5V
I
D
= -2.3A
0.08
V
GS
= -4.5V
I
D
= -2.9A
1
0.06
0.8
0.04
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0.02
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP2060UFDB
Document number: DS37422 Rev. 3 - 3
3 of 7
www.diodes.com
December 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP2075UFDB
1
)
V
(
E
G
A
T 0.8
L
O
V
D
L
O
H
S 0.6
E
R
H
T
E
T
A
G 0.4
,
)
H
V
T
(
S
G
DMP2060UFDB
15
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
-I
D
=1mA
I
S
, SOURCE CURRENT (A)
12
9
-I
D
= 250µA
6
T
A
= 150
C
T
A
= 125
C
3
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
8
7
6
5
4
3
2
1
0
0.2
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
= -10V
I
D
= -3.7A
100
C
rss
f = 1MHz
C
oss
10
0
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 ypical Junction Capacitance
20
0
2
4
6
8 10 12 14 16 18
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
20
100
R
DS(ON)
Limited
)
10
A
(
T
N
E
R
R
DC
U
1
C
P
W
= 10s
N
I
P
W
= 1s
A
R
D
P
W
= 100ms
,
D
P
W
= 10ms
I
0.1
T
C
J(max)
= 150°
I
D
, DRAIN CURRENT (A)
T
A
= 25°
C
V
GS
= -4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMP2060UFDB
Document number: DS37422 Rev. 3 - 3
4 of 7
www.diodes.com
December 2017
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP2075UFDB
1
DMP2060UFDB
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 163癈 /W
163°
C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
0.001
0.00001
0.0001
DMP2060UFDB
Document number: DS37422 Rev. 3 - 3
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December 2017
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