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PSMN5R0-30YL_10

Description
N-channel TrenchMOS logic level FET
File Size208KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN5R0-30YL_10 Overview

N-channel TrenchMOS logic level FET

PSMN5R0-30YL
N-channel TrenchMOS logic level FET
Rev. 03 — 4 January 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
30
91
61
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
gate-drain charge
total gate charge
Symbol Parameter
Dynamic characteristics
Q
GD
Q
G(tot)
V
GS
= 4.5 V; I
D
= 10 A;
V
DS
= 12 V; see
Figure 14
and
15
V
GS
= 4.5 V; I
D
= 10 A;
V
DS
= 12 V; see
Figure 14
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C
-
-
3.8
14.1
-
-
nC
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
3.63
5
mΩ
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