PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
Switched-mode power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; see
Figure 1
and
2
T
mb
= 25 °C; see
Figure 3
Min
-
-
-
Typ
-
-
-
Max
150
50
250
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 50 A;
V
DS
= 120 V; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
and
12
-
33
45
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
30
35
mΩ
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
2
1
3
[1]
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN035-150B
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
Version
SOT404
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
T
mb
= 100 °C; see
Figure 1
and
2
T
mb
= 25 °C; see
Figure 1
and
2
t
p
≤
10 µs; pulsed; T
mb
= 25 °C; see
Figure 2
T
mb
= 25 °C; see
Figure 3
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≤
175 °C; T
j
≥
25 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
150
150
20
36
50
200
250
175
175
50
200
460
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 47 A; V
sup
≤
50 V;
drain-source avalanche unclamped; t
p
= 0.1 ms; R
GS
= 50
Ω;
see
Figure 4
energy
non-repetitive
avalanche current
V
sup
≤
50 V; V
GS
= 10 V; T
j(init)
= 25 °C;
R
GS
= 50
Ω;
unclamped; see
Figure 4
I
AS
-
50
A
PSMN035-150B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 17 November 2009
2 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
120
I
der
(%)
80
03aa24
10
3
I
D
(A)
10
2
003aaa016
R
DSon
= V
DS
/ I
D
t
p
= 10
μs
100
μs
40
10
P
d=
t
p
T
D.C.
t
p
T
0
0
50
100
150
T
mb
(°C)
200
1
1
10
10
2
V
DS
(V)
10
3
t
10 ms
100 ms
1 ms
Fig 2.
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
03aa16
Safe operating area; continuous and peak drain
currents as a function of drain-source volt
120
P
der
(%)
80
10
2
003aaa017
I
AS
(A)
25
°C
10
40
T
j
prior to avalanche = 150
°C
0
0
50
100
150
T
mb
(°C)
200
1
10
−3
10
−2
10
−1
1
t
p
(ms)
10
Fig 4.
Fig 3.
Normalized total power dissipation as a
function of mounting base temperature
Non-repetitive avalanche ruggedness current
as a function of pulse duration
PSMN035-150B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 17 November 2009
3 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
0.6
Max
-
Unit
K/W
thermal resistance from see
Figure 5
junction to mounting
base
thermal resistance from mounted on printed-circuit board;
junction to ambient
minimum footprint
R
th(j-a)
-
-
50
K/W
1
Z
th(j-mb)
(K/W)
10
−1
δ
= 0.5
0.2
0.1
0.05
0.02
10
−2
Single Pulse
P
003aaa018
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 5.
Transient thermal impedance from junction to solder point as a function of pulse duration
PSMN035-150B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 17 November 2009
4 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 150 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 150 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 11
and
12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
and
12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 30 V; T
j
= 25 °C
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 13
V
DS
= 75 V; R
L
= 1.5
Ω;
V
GS
= 10 V;
R
G(ext)
= 5.6
Ω;
T
j
= 25 °C
I
D
= 50 A; V
DS
= 120 V; V
GS
= 10 V;
T
j
= 25 °C; see
Figure 13
-
-
-
-
-
-
-
-
-
-
-
-
-
79
17
33
4720
456
208
25
138
79
93
0.85
118
0.66
-
-
45
-
-
-
-
-
-
-
1.2
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
Min
150
1
2
-
-
-
-
-
-
Typ
-
-
3
0.05
-
2
2
-
30
Max
-
-
4
10
500
100
100
98
35
Unit
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
PSMN035-150B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 17 November 2009
5 of 12
京公网安备 11010802033920号
EEWORLD
