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PSMN005-75B

Description
N-channel TrenchMOS SiliconMAX standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size173KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PSMN005-75B Overview

N-channel TrenchMOS SiliconMAX standard level FET

PSMN005-75B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, D2PAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.005 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 01 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High frequency computer motherboard
DC-to-DC convertors
OR-ing applicationss
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
75
75
230
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 75 A;
V
DS
= 60 V; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 9
and
10
-
50
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
4.3
5
mΩ

PSMN005-75B Related Products

PSMN005-75B PSMN005-75B,118
Description N-channel TrenchMOS SiliconMAX standard level FET N-channel TrenchMOS SiliconMAX standard level FET
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC, D2PAK-3 D2PAK-3
Contacts 3 3
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 75 V 75 V
Maximum drain current (Abs) (ID) 75 A 75 A
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.005 Ω 0.005 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 230 W 230 W
Maximum pulsed drain current (IDM) 400 A 400 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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