PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
in a SOT143B package
Rev. 02 — 21 December 2006
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in
a small SOT143B Surface-Mounted Device (SMD) plastic package designed to protect
two high-speed data lines or high frequency signal lines from the damage caused by ESD
and other transients.
PRTR5V0U2AX incorporates two pairs of ultra low capacitance rail-to-rail diodes as well
as an additional ESD protection diode to ensure signal line protection even if no supply
voltage is available.
1.2 Features
I
I
I
I
I
I
I
ESD protection of two high-speed data lines or high frequency signal lines
Ultra low input/output to ground capacitance: C
(I/O-GND)
= 1.8 pF
ESD protection up to 12 kV
IEC 61000-4-2, level 4 (ESD)
Very low clamping voltage due to an integrated additional ESD protection diode
Very low leakage current
Small 4 lead SOT143B SMD plastic package
1.3 Applications
I
I
I
I
I
I
I
USB 2.0 ports
Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces
Mobile and cordless phones
Personal Digital Assistants (PDA)
Digital cameras
Wide Area Network (WAN) / Local Area Network (LAN) systems
PCs, notebooks, printers and other PC peripherals
NXP Semiconductors
PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse standoff voltage
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
CC
= 0 V
[1]
Conditions
Min
-
-
-
Typ
-
1.8
16
Max
5.5
-
-
Unit
V
pF
pF
C
(I/O-GND)
input/output to ground
capacitance
C
sup
[1]
[2]
supply pin to ground
capacitance
[2]
Measured from pin 2 and 3 to ground
Measured from pin 4 to ground
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
GND
I/O 1
I/O 2
V
CC
1
2
2
006aaa482
Simplified outline
4
3
Symbol
1
4
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PRTR5V0U2AX
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*AE
Type number
PRTR5V0U2AX
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PRTR5V0U2AX_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 21 December 2006
2 of 10
NXP Semiconductors
PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
amb
T
stg
Table 6.
Standard
IEC 61000-4-2; level 4 (ESD)
Parameter
ambient temperature
storage temperature
ESD standards compliance
Conditions
> 12 kV (contact)
Conditions
Min
−40
−55
Max
+85
+125
Unit
°C
°C
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U2AX_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 21 December 2006
3 of 10
NXP Semiconductors
PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
R
V
BR
Parameter
reverse standoff voltage
reverse current
breakdown voltage
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
CC
= 0 V
V
R
= 3 V
[1]
[2]
[3]
Conditions
Min
-
-
6
-
-
-
Typ
-
<1
-
1.8
16
0.7
Max
5.5
100
9
-
-
-
Unit
V
nA
V
pF
pF
V
C
(I/O-GND)
input/output to ground
capacitance
C
sup
V
F
[1]
[2]
[3]
supply pin to ground
capacitance
forward voltage
[2]
Measured from pin 2, 3 and 4 to ground
Measured from pin 4 to ground
Measured from pin 2 and 3 to ground
2.2
C
(I/O-GND)
(pF)
2.0
006aaa679
1.8
1.6
1.4
1.2
0
1
2
3
4
5
V
(I/O-GND)
(V)
f = 1 MHz; T
amb
= 25
°C
Fig 2. Input/output to ground capacitance as a function of input/output to ground
voltage; typical values
PRTR5V0U2AX_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 21 December 2006
4 of 10
NXP Semiconductors
PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
7. Application information
Handling data rates up to 480 Mbit/s, USB 2.0 interfaces require ESD protection devices
with an extremely low line capacitance in order to avoid signal distortion.
With a capacitance of only 1.8 pF, the NXP PRTR5V0U2AX offers IEC 61000-4-2, level 4
compliant ESD protection.
The PRTR5V0U2AX integrates two ultra-low capacitance rail-to-rail ESD protection
diodes and an additional ESD protection diode in a small 4 lead SOT143B package.
The additional ESD protection diode connected between ground and V
CC
prevents
charging of the supply.
To achieve the maximum ESD protection level, no additional external capacitors are
required.
USB controller
common mode
choke
D+
D−
V
BUS
protected IC/device
V
BUS
D+
D−
GND
006aaa485
Fig 3. Application diagram: USB 2.0
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PRTR5V0U2AX as close to the input terminal or connector as possible.
2. The path length between the PRTR5V0U2AX and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PRTR5V0U2AX_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 21 December 2006
5 of 10
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