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PMZ270XN

Description
N-channel TrenchMOS extremely low level FET
CategoryDiscrete semiconductor    The transistor   
File Size102KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMZ270XN Overview

N-channel TrenchMOS extremely low level FET

PMZ270XN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-101
package instruction1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)2.15 A
Maximum drain current (ID)2.15 A
Maximum drain-source on-resistance0.34 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)4.3 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMZ270XN
N-channel TrenchMOS extremely low level FET
Rev. 01. — 21 February 2008
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I
Profile 55 % lower than SOT23
I
Low on-state resistance
I
Leadless package
I
Footprint 90 % smaller than SOT23
I
Low threshold voltage
I
Fast switching
1.3 Applications
I
Driver circuits
I
DC-to-DC converters
I
Load switching in portable appliances
1.4 Quick reference data
I
V
DS
20 V
I
R
DSon
340 mΩ
I
I
D
2.15 A
I
P
tot
2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
1
3
2
Transparent
top view
G
G
mbb076
mbb076
Simplified outline
Symbol
D
D
SOT883 (SC-101)
S
S
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