DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMSS3904
NPN switching transistor
Product data sheet
Supersedes data of 1997 Sep 03
1999 May 27
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and amplification
•
Telephony and professional communication equipment.
DESCRIPTION
NPN switching transistor in an SC-70 (SOT323) plastic
package. PNP complement: PMSS3906.
PINNING
PIN
1
2
3
base
emitter
collector
PMSS3904
DESCRIPTION
handbook, halfpage
3
3
1
MARKING CODE
TYPE NUMBER
PMSS3904
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
Simplified outline (SC-70; SOT323)
and symbol.
MARKING CODE
(1)
∗04
2
1
Top view
2
MAM062
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
40
6
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 May 27
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 1 V; see Fig.2
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA; note 1
I
C
= 100 mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 100
μA;
V
CE
= 5 V; R
S
= 1 kΩ
f = 10 Hz to 15.7 KHz
40
70
100
60
30
−
−
650
−
−
−
180
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMSS3904
VALUE
625
UNIT
K/W
MAX.
50
10
50
−
−
300
−
−
200
300
850
950
4
12
−
5
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−
1 mA; V
CC
= 3 V;
V
BB
=
−1.9
V
−
−
−
−
−
−
110
50
60
1200
1000
200
ns
ns
ns
ns
ns
ns
1999 May 27
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC gain current; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 500
μs;
t
p
= 10
μs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1999 May 27
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMSS3904
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 May 27
5
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