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PMP4201V

Description
NPN/NPN matched double transistors
CategoryDiscrete semiconductor    The transistor   
File Size105KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMP4201V Overview

NPN/NPN matched double transistors

PMP4201V Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
PMP4201V; PMP4201G;
PMP4201Y
NPN/NPN matched double transistors
Rev. 04 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1.
Product overview
Package
NXP
PMP4201V
PMP4201G
PMP4201Y
SOT666
SOT353
SOT363
JEITA
-
SC-88A
SC-88
NPN/NPN h
FE1
/h
FE2
0.95 complement
PMP4501V
PMP4501G
PMP4501Y
PNP/PNP
complement
PMP5201V
PMP5201G
PMP5201Y
Type number
1.2 Features
I
I
I
I
Current gain matching
Base-emitter voltage matching
Common emitter configuration for SOT353 types
Application-optimized pinout
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
290
Max
45
100
450
Unit
V
mA
Per transistor

PMP4201V Related Products

PMP4201V PMP4201Y PMP4201G
Description NPN/NPN matched double transistors NPN/NPN matched double transistors NPN/NPN matched double transistors
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction PLASTIC PACKAGE-6 SMALL OUTLINE, R-PDSO-G6 PLASTIC, SC-88A, 5 PIN
Contacts 6 6 5
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE) 200 200 200
JESD-30 code R-PDSO-F6 R-PDSO-G6 R-PDSO-G5
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 2 2 2
Number of terminals 6 6 5
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
Parts packaging code - SC-88 SC-88A
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