SO
T4
57
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
Rev. 1 — 20 July 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 5.1 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
25
Max
30
20
5.1
31
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D
D
G
S
D
D
drain
drain
gate
source
drain
drain
1
2
3
mbb076
Simplified outline
6
5
4
Graphic symbol
D
G
SOT457 (TSOP6)
S
NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Package
Name
PMN35EN
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
PMN35EN
Marking codes
Marking code
SH
Type number
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
[1]
Max
30
20
5.1
3.2
24
500
1250
4170
150
150
150
1.3
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMN35EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 July 2011
2 of 15
NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
017aaa280
10
2
I
D
(A)
10
(1)
(2)
Limit R
DSon
= V
DS
/I
D
1
(3)
(4)
(5)
(6)
10
–1
10
–2
10
–1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 100 µs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
sp
= 25 °C
(6) DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN35EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 July 2011
3 of 15
NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
215
85
20
Max
250
100
30
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
017aaa281
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
10
0.01
0.02
0
1
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa282
0.25
0.1
10
0.05
0.02
0.01
0
1
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
PMN35EN
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 July 2011
4 of 15
NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5.1 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5.1 A; T
j
= 150 °C
V
GS
= 4.5 V; I
D
= 4.3 A; T
j
= 25 °C
g
fs
forward
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
I
S
= 1.3 A; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 15 V; V
GS
= 10 V; R
G(ext)
= 6
Ω;
T
j
= 25 °C; I
D
= 5.1 A
V
DS
= 15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
V
DS
= 10 V; I
D
= 5.1 A; T
j
= 25 °C
Min
30
1
-
-
-
-
-
-
-
-
Typ
-
1.5
-
-
-
-
25
39
32
14
Max
-
2.5
1
10
100
100
31
48
43
-
Unit
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
Static characteristics
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
V
DS
= 15 V; I
D
= 5.1 A; V
GS
= 10 V;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
6.2
0.9
1
334
81
40
4
15
53
24
0.75
9.3
-
-
-
-
-
-
-
-
-
1.2
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
Source-drain diode
PMN35EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 July 2011
5 of 15
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