PMEG6020EP
2 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 17 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Average forward current: I
F(AV)
2 A
Reverse voltage: V
R
60 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
= 0.5;
f = 20 kHz
T
amb
85
C
T
sp
140
C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
460
60
2
2
60
530
150
A
A
V
mV
A
reverse voltage
forward voltage
reverse current
I
F
= 2 A
V
R
= 60 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG6020EP
2 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG6020EP
-
Description
plastic surface-mounted package; 2 leads
Version
SOD128
Type number
4. Marking
Table 4.
Marking codes
Marking code
AA
Type number
PMEG6020EP
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
C
square wave;
= 0.5;
f = 20 kHz
T
amb
85
C
T
sp
140
C
I
FSM
P
tot
non-repetitive peak
forward current
total power dissipation
square wave;
t
p
= 8 ms
T
amb
25
C
[2]
[1]
Min
-
Max
60
Unit
V
-
-
-
-
-
-
2
2
50
625
1050
2100
A
A
A
mW
mW
mW
[3][4]
[3][5]
[3][1]
PMEG6020EP_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 17 March 2010
2 of 14
NXP Semiconductors
PMEG6020EP
2 A low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
55
65
Max
150
+150
+150
Unit
C
C
C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
= 25
C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
200
120
60
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG6020EP_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 17 March 2010
3 of 14
NXP Semiconductors
PMEG6020EP
2 A low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
10
0.02
0.05
0.01
0.75
0.33
0.2
006aab678
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab679
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.05
0.02
0.01
10
0.1
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6020EP_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 17 March 2010
4 of 14
NXP Semiconductors
PMEG6020EP
2 A low V
F
MEGA Schottky barrier rectifier
10
2
Z
th(j-a)
(K/W)
10
006aab680
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.02
0.01
0.33
0.2
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.1 A
I
F
= 0.5 A
I
F
= 1 A
I
F
= 1.5 A
I
F
= 2 A
I
R
reverse current
V
R
= 5 V
V
R
= 10 V
V
R
= 60 V
C
d
diode capacitance
f = 1 MHz
V
R
= 1 V
V
R
= 10 V
-
-
240
80
-
-
pF
pF
Min
-
-
-
-
-
-
-
-
Typ
300
360
400
430
460
2.5
3.5
60
Max
340
420
460
500
530
-
-
150
Unit
mV
mV
mV
mV
mV
A
A
A
PMEG6020EP_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 17 March 2010
5 of 14
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