PMEG3002AEL
30 V, 0.2 A very low V
F
MEGA Schottky barrier rectifier in
leadless ultra small SOD882 package
Rev. 02 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an
integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small
plastic package.
1.2 Features
Forward current: 0.2 A
Reverse voltage: 30 V
Very low forward voltage
Leadless ultra small plastic package
Power dissipation comparable to SOT23
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Low voltage rectification
High efficiency DC-to-DC conversion
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
Quick reference data
Parameter
forward current
reverse voltage
Conditions
Min
-
-
Typ
-
-
Max
0.2
30
Unit
A
V
NXP Semiconductors
PMEG3002AEL
0.2 A very low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Discrete pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
Bottom view
2
Top view
001aaa332
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG3002AEL
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD882
Type number
4. Marking
Table 4.
Marking
Marking code
F3
Type number
PMEG3002AEL
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
continuous reverse voltage
continuous forward current
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.25
non-repetitive peak forward
current
junction temperature
operating ambient temperature
storage temperature
t
p
= 8 ms square
wave
[1]
[1]
Conditions
Min
-
-
-
-
-
−65
−65
Max
30
0.2
1
3
150
+150
+150
Unit
V
A
A
A
°C
°C
°C
PMEG3002AEL_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
2 of 8
NXP Semiconductors
PMEG3002AEL
0.2 A very low V
F
MEGA Schottky barrier rectifier
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
Conditions
in free air
[1][2]
Typ
500
Unit
K/W
Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
continuous forward
voltage
Conditions
see
Figure 1;
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
continuous reverse
current
see
Figure 2;
V
R
= 10 V
V
R
= 30 V
C
d
[1]
[1]
Min
-
-
-
-
-
-
-
-
Typ
125
185
250
350
420
2.5
10
17
Max
190
250
300
400
480
10
50
25
Unit
mV
mV
mV
mV
mV
μA
μA
pF
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 1 V; f = 1 MHz;
see
Figure 3
PMEG3002AEL_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
3 of 8
NXP Semiconductors
PMEG3002AEL
0.2 A very low V
F
MEGA Schottky barrier rectifier
10
3
I
F
(mA)
10
2
001aaa351
10
2
I
R
(mA)
10
(1)
(2)
001aaa352
(1)
(2)
(3)
(4)
1
(3)
10
10
−1
1
10
−2
(4)
10
−1
0
0.1
0.2
0.3
0.4
V
F
(V)
0.5
10
−3
0
10
20
V
R
(V)
30
(1) T
j
= 150
°C
(2) T
j
= 125
°C
(3) T
j
= 85
°C
(4) T
j
= 25
°C
(1) T
j
= 150
°C
(2) T
j
= 125
°C
(3) T
j
= 85
°C
(4) T
j
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
40
C
d
(pF)
30
Fig 2.
Reverse current as a function of reverse
voltage; typical values
001aaa353
20
10
0
0
10
20
V
R
(V)
30
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG3002AEL_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
4 of 8
NXP Semiconductors
PMEG3002AEL
0.2 A very low V
F
MEGA Schottky barrier rectifier
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
L
L
1
2
b
e1
A
A1
E
D
(2)
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
0.50
0.46
A
1
max.
0.03
b
0.55
0.47
D
0.62
0.55
E
1.02
0.95
e
1
0.65
L
0.30
0.22
0.5
scale
1 mm
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
SOD882
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16
03-04-17
Fig 4.
Package outline
© NXP B.V. 2010. All rights reserved.
PMEG3002AEL_2
Product data sheet
Rev. 02 — 15 January 2010
5 of 8
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