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PMEG2010EH

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size66KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMEG2010EH Overview

1 A, SILICON, SIGNAL DIODE

PMEG2010EH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, SMD, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.13 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current9 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.83 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
PMEG2010EH; PMEG2010EJ;
PMEG2010ET
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 04 — 20 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG2010EH
PMEG2010EJ
PMEG2010ET
SOD123F
SOD323F
SOT23
JEITA
-
SC-90
-
JEDEC
-
-
TO-236AB
single
single
single
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
1 A
Reverse voltage: V
R
20 V
Very low forward voltage
Small SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1000 mA
[1]
Conditions
T
sp
55
°C
Min
-
-
-
Typ
-
-
420
Max
1
20
500
Unit
A
V
mV
Pulse test: t
p
300
µs; δ ≤
0.02.

PMEG2010EH Related Products

PMEG2010EH PMEG2010ET PMEG2010EJ
Description 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction PLASTIC, SMD, 2 PIN PLASTIC, SMD, 3 PIN R-PDSO-F2
Contacts 2 3 2
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.13 V 0.13 V 0.13 V
JESD-30 code R-PDSO-F2 R-PDSO-G3 R-PDSO-F2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 2 3 2
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Maximum power dissipation 0.83 W 0.42 W 0.83 W
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 20 V 20 V 20 V
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT GULL WING FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
Maximum non-repetitive peak forward current 9 A 9 A -
Parts packaging code - SOT-23 SC-90
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