PMEG2010AEJ
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier in
SOD323F package
Rev. 03 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD323F (SC-90) very
small and flat lead Surface Mounted Device (SMD) plastic package.
1.2 Features
Forward current:
≤
1 A
Reverse voltage:
≤
20 V
Very low forward voltage
Very small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1000 mA
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
480
Max
1
20
550
Unit
A
V
mV
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG2010AEJ
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
1
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG2010AEJ
SC-90
Description
plastic surface mounted package; 2 leads
Version
SOD323F
Type number
4. Marking
Table 4.
Marking codes
Marking code
EM
Type number
PMEG2010AEJ
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
sp
≤
55
°C
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
−65
−65
Max
20
1
5.5
10
360
830
150
+150
+150
Unit
V
A
A
A
mW
mW
°C
°C
°C
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.25
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
PMEG2010AEJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
2 of 9
NXP Semiconductors
PMEG2010AEJ
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1][2]
[1][3]
[4]
Min
-
-
-
Typ
-
-
-
Max
350
150
55
Unit
K/W
K/W
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Solder point of cathode tab.
[2]
[3]
[4]
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
I
R
reverse current
V
R
= 5 V
V
R
= 8 V
V
R
= 10 V
V
R
= 15 V
V
R
= 20 V
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
Typ
240
300
400
480
5
7
8
10
15
40
Max
270
350
460
550
10
20
30
50
70
50
Unit
mV
mV
mV
mV
μA
μA
μA
μA
μA
pF
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 1 V; f = 1 MHz
PMEG2010AEJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
3 of 9
NXP Semiconductors
PMEG2010AEJ
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
10
4
I
F
(mA)
10
3
(1)
006aaa361
10
5
I
R
(μA) 10
4
10
3
10
2
10
1
10
−1
10
−2
10
−3
(5)
(4)
(1)
(2)
(3)
006aaa362
10
2
(2)
10
1
10
−1
10
−2
0
0.1
0.2
0.3
(3)
(4)
(5)
0.4
0.5
0.6
0.7
V
F
(V)
0
5
10
15
V
R
(V)
20
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
80
Cd
(pF)
60
Fig 2.
Reverse current as a function of reverse
voltage; typical values
006aaa363
40
20
0
0
5
10
15
V
R
(V)
20
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG2010AEJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
4 of 9
NXP Semiconductors
PMEG2010AEJ
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
8. Package outline
1.35
1.15
1
0.5
0.3
0.80
0.65
2.7
2.3
1.8
1.6
2
0.40
0.25
Dimensions in mm
0.25
0.10
04-09-13
Fig 4.
Package outline SOD323F (SC-90)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PMEG2010AEJ
[1]
Package
SOD323F
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-115
10000
-135
For further information and the availability of packing methods, see
Section 14.
10. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
1.65
0.95
0.50
0.60
occupied area
solder paste
0.50
(2×)
001aab169
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 5.
Reflow soldering footprint SOD323F (SC-90)
PMEG2010AEJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
5 of 9
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