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PMD9001D

Description
MOSFET driver
CategoryDiscrete semiconductor    The transistor   
File Size111KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMD9001D Overview

MOSFET driver

PMD9001D Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-74
package instructionPLASTIC, SMD, SC-74, 6 PIN
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum off time (toff)1307 ns
Maximum opening time (tons)65 ns
PMD9001D
MOSFET driver
Rev. 01 — 16 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and
high-speed switching diode connected in totem pole configuration in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Two transistors and one high-speed switching diode as driver
Totem pole configuration
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
I
MOSFET driver
1.4 Quick reference data
Table 1.
Symbol
I
C
V
CEO
I
CM
Diode (D1)
I
F
V
F
[1]
Quick reference data
Parameter
collector current
collector-emitter voltage
peak collector current
open base
single pulse;
t
p
1 ms
Conditions
Min
-
-
-
Typ
-
-
-
Max
0.1
45
0.2
Unit
A
V
A
Per transistor
Transistor 2 (TR2)
forward current
forward voltage
Pulse test: t
p
300
µs; δ ≤
0.02.
-
I
F
=
−200
mA
[1]
-
-
−0.2
−1.1
A
V
-
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