PMD4002K
MOSFET driver
Rev. 01 — 3 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN switching transistor and high-speed switching diode to protect the base-emitter
junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Switching transistor and high-speed switching diode as driver
High-speed switching diode to protect the base-emitter junction
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
I
Power MOSFET driver
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
Diode
I
F
V
F
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
≤
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
40
0.6
1
Unit
V
A
A
NPN transistor
forward current
forward voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
-
I
F
=
−200
mA
[1]
-
-
−0.2
−1.1
A
V
-
NXP Semiconductors
PMD4002K
MOSFET driver
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base TR1, cathode D1
emitter TR1, anode D1
collector TR1
1
2
D1
Simplified outline
3
Symbol
3
TR1
1
2
006aaa655
3. Ordering information
Table 3.
Ordering information
Package
Name
PMD4002K
SC-59A
Description
plastic surface-mounted package; 3 leads
Version
SOT346
Type number
4. Marking
Table 4.
Marking codes
Marking code
D2
Type number
PMD4002K
PMD4002K_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 November 2006
2 of 15
NXP Semiconductors
PMD4002K
MOSFET driver
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
single pulse;
t
p
≤
1 ms
Min
-
-
-
-
-
-
-
-
-
-
Max
40
40
0.6
1
0.2
0.3
250
330
445
−0.2
−0.6
Unit
V
V
A
A
A
A
mW
mW
mW
A
A
NPN transistor
Diode
I
F
I
FRM
I
FSM
forward current
repetitive peak forward
current
non-repetitive peak forward
current
t
p
≤
1 ms;
δ
= 0.25
square wave
t
p
≤
1
µs
t
p
≤
100
µs
t
p
≤
10 ms
Device
T
j
T
amb
T
stg
[1]
[2]
[3]
-
-
-
-
-
−65
−65
−9
−3
−1.7
150
+150
+150
A
A
A
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMD4002K_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 November 2006
3 of 15
NXP Semiconductors
PMD4002K
MOSFET driver
500
P
tot
(mW)
400
(2)
(1)
006aaa870
300
(3)
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
500
375
280
Unit
K/W
K/W
K/W
NPN transistor
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMD4002K_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 November 2006
4 of 15
NXP Semiconductors
PMD4002K
MOSFET driver
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
006aaa871
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
0.2
0.1
0.05
10
0.02
0.01
0
1
0.75
0.5
0.33
006aa872
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD4002K_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 November 2006
5 of 15
京公网安备 11010802033920号
EEWORLD
