PMBTA42/DG datasheet, PDF - EEWORLD Datasheet

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PMBTA42/DG: Description100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size76KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PMBTA42/DG Overview

100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PMBTA42/DG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC, SMD, SOT23, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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PMBTA42

300 V, 100 mA NPN high-voltage transistor

Rev. 05 — 12 December 2008

Product data sheet

1. Product profile

1.1 General description

NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

PNP complement: PMBTA92.

1.2 Features

High voltage (max. 300 V)

1.3 Applications

Telephony and professional communication equipment

1.4 Quick reference data

Table 1.

Symbol

CEO

Quick reference data

Parameter

collector-emitter voltage

collector current

DC current gain

= 10 V

= 1 mA

= 10 mA

= 30 mA

Conditions

open base

Min

Typ

Max

300

100

Unit

2. Pinning information

Table 2.

Pinning

Description

base

emitter

collector

sym021

Simplified outline

Graphic symbol

PMBTA42/DG Related Products

	PMBTA42/DG	PMBTA42
Description	100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	SOT-23	SOT-23
package instruction	PLASTIC, SMD, SOT23, 3 PIN	PLASTIC, SMD, SOT23, 3 PIN
Contacts	3	3
Reach Compliance Code	unknow	compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	300 V	300 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	30
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz

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