DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT2907; PMBT2907A
PNP switching transistors
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP switching transistors
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: PMBT2222 and PMBT2222A.
MARKING
TYPE NUMBER
PMBT2907
PMBT2907A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBT2907
PMBT2907A
PACKAGE
NAME
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*2B
*2F
Top view
handbook, halfpage
PMBT2907;
PMBT2907A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
PMBT2907
PMBT2907A
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
PMBT2907; PMBT2907A
CONDITIONS
open emitter
−
−
−
−
−
−
−
−
MIN.
MAX.
−60
−40
−60
−5
−600
−800
−200
250
+150
150
+150
UNIT
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP switching transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
PMBT2907
PMBT2907A
collector-base cut-off current
PMBT2907
PMBT2907A
I
EBO
h
FE
emitter-base cut-off current
DC current gain
PMBT2907
PMBT2907A
DC current gain
PMBT2907
PMBT2907A
DC current gain
PMBT2907
PMBT2907A
DC current gain
DC current gain
PMBT2907
PMBT2907A
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−150
mA; I
B
=
−15
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−150
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−10
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
= 0; V
EB
=
−5
V
I
C
=
−0.1
mA; V
CE
=
−10
V
CONDITIONS
I
E
= 0; V
CB
=
−50
V
PMBT2907; PMBT2907A
MIN.
−
−
MAX.
−20
−10
−20
−10
−50
−
−
−
−
−
−
300
−
−
−400
−1.6
−1.3
−2.6
8
30
−
UNIT
nA
nA
µA
µA
nA
I
E
= 0; V
CB
=
−50
V; T
j
= 125
°C
−
−
−
35
75
50
100
75
100
100
30
50
−
−
−
−
−
−
200
−
−
−
−
−
−
mV
V
V
V
pF
pF
MHz
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= I
c
= 0; V
EB
=
−2
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−20
V; f = 100 MHz
I
Con
=
−150
mA; I
Bon
=
−15
mA;
I
Boff
= 15 mA
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907; PMBT2907A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−9.5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
= 3.5 V; V
CC
=
−29.5
V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Jan 16
5
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