PJ2N9015
PNP Epitaxial Silicon Transistor
PRE-APLIFIER, LOW LEVEL&LOW NOISE
•
•
•
High total power dissipation (PT=450mW)
High h
FE
and good linearity
Complementary to PJ2N9014
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS
(T a= 25
°C
)
Characteristic
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
Ic
Pc
Tj
Tstg
Rating
-50
-45
-5
-100
450
150
-55 ~150
Uint
V
V
V
mA
mW
°C
°C
Device
PJ2N9015CT
PJ2N9015CX
Operating Temperature
-20℃½+85℃
Package
TO-92
SOT-23
P in : 1. Emitter
2. Base
3. Collector
P in : 1.Base
2.Emitter
3. Collector
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
(T a= 25
°C
)
Characte ristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Produce
Noise Figure
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(ON)
C
ob
f
T
NF
Te st Conditions
I
C
= -100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -100μA , I
C
=0
V
CB
= -50V , I
E
= 0
V
EB
= -5V , I
C
=0
V
EB
= -5V, I
C
= -1 mA
I
C
= -100 mA, I
B
= -5mA
I
C
= -100mA , I
B
= -5mA
V
CE
= -5V, Ic = -2 mA
V
CB
= -10V, IE = 0
f=1MHz
V
CE
= -5V, Ic = -10 mA
V
CE
= -5V, Ic = -0.2 mA
f=1KHz, Rs=2KΩ
Min
-50
-45
-5
Typ
Max
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
dB
60
-0.6
200
-0.2
-0.82
-0.65
4.5
190
0.7
-50
-50
600
-0.7
-1.0
-0.75
7.0
100
10
h
EF
CLASSIFICATION
Classification
H
FE
A
60-150
B
100-300
C
200-600
D
400-1000
1-3
2002/01.rev.A
PJ2N9015
PNP Epitaxial Silicon Transistor
STATIC CHARACTERISTIC
BASE-EMITTER VOLTAGE
DC CURRENT GAIN
CURRENT GAIN-BANDWIDTH PRODUCT
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
COLLECTOR OUTPUT CAPACITANCE
2-3
2002/01.rev.A
ST - Low Power RF
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