PEMB17; PUMB17
PNP/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 1 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors
Table 1.
Product overview
Package
NXP
PEMB17
PUMB17
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD17
PUMD17
NPN/NPN
complement
PEMH17
PUMH17
Type number
1.2 Features
I
I
I
I
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
33
0.37
Typ
-
-
47
0.47
Max
−50
−100
61
0.57
Unit
V
mA
kΩ
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
006aaa212
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMB17
PUMB17
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMB17
PUMB17
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
5M
B*8
Type number
PEMB17_PUMB17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
2 of 11
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
Max
−50
−50
−10
+10
−40
−100
−100
200
200
+150
150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
[1] [2]
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
[1] [2]
-
-
300
300
mW
mW
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
T
amb
≤
25
°C
[1]
[1] [2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
T
amb
≤
25
°C
[1]
[1] [2]
-
-
-
-
416
416
K/W
K/W
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
Reflow soldering is the only recommended soldering method.
PEMB17_PUMB17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
3 of 11
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−30
V; I
B
= 0 A
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
V
CE
=
−5
V; I
C
=
−100 µA
V
CE
=
−0.3
V; I
C
=
−2
mA
Min
-
-
-
-
60
-
-
−4
33
0.37
-
Typ
-
-
-
-
-
-
−1.7
−2.7
47
0.47
-
Max
−100
−1
−50
−110
-
−150
−1.2
-
61
0.57
3
pF
mV
V
V
kΩ
Unit
nA
µA
µA
µA
Per transistor
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PEMB17_PUMB17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
4 of 11
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
10
3
h
FE
(1)
006aaa208
−10
2
006aaa209
(2)
V
CEsat
(mV)
(1)
(2)
(3)
10
2
(3)
10
1
−10
−1
−1
−10
I
C
(mA)
−10
2
−10
−10
−1
−1
−10
I
C
(mA)
−10
2
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
006aaa210
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa211
−10
2
V
I(on)
(V)
−10
(1)
(2)
−10
V
I(off)
(V)
(1)
(2)
(3)
−1
(3)
−1
−10
−1
−10
−1
−1
−10
I
C
(mA)
−10
2
−10
−1
−10
−2
−10
−1
−1
I
C
(mA)
−10
V
CE
=
−0.3
V
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
V
CE
=
−5
V
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
Fig 3.
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
PEMB17_PUMB17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
5 of 11
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