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OM100Q70DB

Description
50 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size24KB,2 Pages
ManufacturerETC1
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OM100Q70DB Overview

50 A, SILICON, RECTIFIER DIODE

OM100Q05CB/RB/DB OM100Q15CB/RB/DB OM100Q30CB/RB/DB OM100Q50CB/RB/DB OM100Q70CB/RB/DB
OM100Q10CB/RB/DB OM100Q20CB/RB/DB OM100Q40CB/RB/DB OM100Q60CB/RB/DB OM100Q80CB/RB/DB
100 AMP ULTRA FAST CENTER-TAP IN HERMETIC
ISOLATED POWER BLOCK PACKAGE
100 Amp, 50 To 800 Volt High Power
Rectifier Module
FEATURES
Rugged Package Design
Very Low Forward Voltage
Very Fast Switching Time
High Current
Center-Tap Configuration
Low Thermal Resistance
Common Cathode Standard
Ceramic Feedthroughs Available
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. The series combines the latest
silicon technology and a package specifically designed for high efficiency/high current
applications. These devices are ideally suited for applications where small size and a
hermetically sealed package are required.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 800 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . . . . 50 A
Surge Current (Non-Repetitive 8.3 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 A
Thermal Resistance, Junction-to-Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . - 55° C to + 150°C
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
2
OMXXXXXXDB
Common cathode is standard. Contact factory for performance
characteristics for common anode and doubler.
PIN CONNECTION
2
COMMON
CATHODE
OMXXXXXXCB
1
3
OMXXXXXXRB
3
3
DOUBLER
1
2
3
4 11 R0
3.2 - 1
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