DMG1013UWQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish
-
Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.006 grams (Approximate)
Drain
D
Gate
ESD PROTECTED
Gate
Protection
Diode
Source
G
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 5)
Part Number
DMG1013UWQ-7
DMG1013UWQ-13
Notes:
Case
SOT323
SOT323
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PA1
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
…
…
Feb
2
2015
C
Mar
3
2016
D
Apr
4
YM
2017
E
May
5
2018
F
Jun
6
2019
G
Jul
7
2020
H
Aug
8
2021
I
Sep
9
2022
J
Oct
O
2023
K
Nov
N
2024
L
Dec
D
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
1 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
T
A
= +25°
C
T
A
= +85°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-20
±6
-0.82
-0.54
-3
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25° (Note 6)
C
Operating and Storage Temperature Range
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
Symbol
P
D
R
θJA
T
J
, T
STG
Value
0.31
398
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-20
-
-
-0.5
-
-
Typ
-
-
-
-
0.5
0.7
1.0
0.9
-0.8
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
Max
-
-100
±2.0
-1.0
0.75
1.05
1.5
-
-1.2
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
μA
V
Ω
S
V
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
DS
= -10V, I
D
= -250mA
V
GS
= 0V, I
S
= -150mA
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= -200mA
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
-
-
-
-
-
-
-
-
-
-
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
2.0
1.8
1.6
I
D
, DRAIN CURRENT (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
V
GS
= -1.5V
V
GS
= -4.5V
V
GS
= -6.0V
V
GS
= -2.0V
V
GS
= -2.5V
V
GS
= -4.0V
V
GS
= -3.0V
I
D
, DRAIN CURRENT (A)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
V
DS
= -5V
-55℃
25℃
85℃
125℃
150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
V
GS
= -1.8V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
6
I
D
= -150mA
I
D
= -430mA
V
GS
= -2.5V
V
GS
= -4.5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
1.8
V
GS
= -4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
1
125℃
150℃
1.6
0.8
1.4
V
GS
= -2.5V, I
D
= -500mA
0.6
85℃
25℃
1.2
0.4
-55℃
0.2
1
V
GS
= -4.5V, I
D
= -1A
0.8
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
0
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
January 2016
© Diodes Incorporated
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
3 of 7
www.diodes.com
DMG1013UWQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.2
1.2
V
GS
= -2.5V, I
D
= -500mA
0.9
1
I
D
= -1mA
0.8
I
D
= -250μA
0.6
0.6
V
GS
= -4.5V, I
D
= -1A
0.3
0
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0.4
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
f = 1MHz
C
iss
-25
2
1.8
1.6
I
S
, SOURCE CURRENT (A)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
T
J
=
T
J
=
150
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= 0V
100
C, CAPACITANCE (pF)
10
C
oss
C
rss
125
o
C
1
0
5
10
15
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Figure 10. Typical Total Capacitance
20
10
R
DS(ON)
Limited
P
W
=1ms
I
D
, DRAIN CURRENT (A)
1
P
W
=100µs
0.1
0.01
P
W
=10ms
P
W
=100ms
P
W
=1s
P
W
=10s
T
J(Max)
=150℃
T
C
=25℃
Single Pulse
DUT on 1*MRP Board
V
GS
=-4.5V
0.1
DC
0.001
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
100
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
1
D=0.7
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
R
θJA
(t)=r(t) * R
θJA
R
θJA
=380℃/W
Duty Cycle, D=t1/t2
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
5 of 7
www.diodes.com
January 2016
© Diodes Incorporated
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