SEMICONDUCTOR
RoHS
NST200F120 / NST200F120-A
RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 100A
×
2
Available
RoHS*
COMPLIANT
FEATURES
Fast recovery time characteristic
Electrically isolated base plate
Large creepage distance between terminal
Simplified mechanical designs, rapid assembly
Compliant to RoHS
Designed and for industrial level
DESCRIPTION
This SOT-227 modules with FRED rectifier are available
in two basic configurations. They are the antiparallel
and the parallel configurations. The antiparallel configuration
NST200F120-A is used for simple series rectifier and high
voltage application. The parallel configuration NST200F120 is
used for simple parallel rectifier and high current application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. These modules are intended
for general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper, and
inverters.
CIRCUIT CONFIGURATION
3
4
3
4
2
1
2
1
Parallel
NST200F120
Anti-Parallel
NST200F120-A
APPLICATIONS
Switching power supplies
Inverters
Motor controllers
Converters
Snubber diodes
Uninterruptible power supplies (UPS)
Induction heating
High speed rectifiers
PRODUCT SUMMARY
V
R
V
F
(typical) at 125
ºC
t
rr
(typical)
I
F(DC)
at T
C
per diode
1200
V
1.8
V
47
ns
93A at
80
ºC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
SYMBOL
V
R
per leg
per module
TEST CONDITIONS
VALUES
1200
UNITS
V
I
F
I
FSM
V
ISOL
P
D
T
J
, T
Stg
T
c
= 80
ºC
T
J
= 25
ºC
t = 1 minute
93
186
900
2500
416
166
- 55
to
150
V
W
°C
A
RMS isolation voltage, any terminal to case
Maximum power dissipation
T
c
= 25
ºC
T
c
= 100
ºC
Operating junction and storage temperature range
Page 1 of 5
SEMICONDUCTOR
RoHS
NST200F120 / NST200F120-A
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 100
A
1200
-
-
-
-
-
-
2.0
2.3
1.8
2
2
120
-
2.5
-
-
250
-
µA
mA
pF
V
Maximum forward voltage
V
FM
I
F
= 200
A
I
F
= 100
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 125°C,
V
R
= V
R
rated
V
R
= 200V
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Reverse recovery time
I
RRM1
I
RRM2
Reverse recovery time
Q
rr1
Q
rr2
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 250mA (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = -100 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 100A
dI
F
/dt = -200 A/µs
V
R
=800 V
-
-
-
-
-
-
-
-
70
47
420
580
7
19
1250
5350
90
-
ns
-
-
-
-
-
-
nC
A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
(T
J
= 25
ºC unless otherwise specified)
SYMBOL
MIN.
TYP.
MAX.
UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to sink, flat, greased surface
Weight
Mounting torque
RthJC
RthCS
-
-
-
-
-
-
-
0.05
30
-
0.3
0.15
-
-
1.1
g
Nm
ºC/W
K/W
Page 2 of 5
SEMICONDUCTOR
RoHS
NST200F120 / NST200F120-A
RoHS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.45
Thermal impedance(°C/W), Z
θJC
0.40
0.35
0.30
0.25
0.20
0.9
0.7
0.5
0.3
Note:
PDM
t
1
t
2
0.15
0.10
0.1
0.05
0.05
0
10
-5
10
-4
SINGLE PULSE
10
-3
10
-2
Duty Factor D =t 1 /t 2
Peak T
J
= P
DM
xZ
θ
JC
+T
C
0.1
1
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
300
250
Fig.3 Reverse recovery time vs. current rate of change
700
Reverse recovery time, t
rr
(ns)
600
500
T
J
=125°C
T
R
=800V
200A
Forward current, I
F
200
100A
400
50A
300
200
100
(A)
150
100
T
J
=150°C
T
J
=125°C
T
J
=25°C
50
T
J
=-55°C
0
0
0.5
1
1.5
2
2.5
3
0
0
200
400
600
800
1000
1200
Anode-to-cathode voltage (V), V
F
Current rate of change(A/μs), -di
F
/dt
Fig.4 Reverse recovery charge vs. current rate of change
12000
Fig 5. Reverse recovery current vs. current rate of change
Reverse recovery current, I
RRM
80
70
60
50
(A)
40
30
20
10
0
50A
100A
T
J
=125°C
T
R
=800V
Reverse recovery charge, Q
rr
T
J
=125°C
T
R
=800V
200A
10000
8000
(nC)
200A
100A
6000
50A
4000
2000
0
0
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
0
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
Page 3 of 5
SEMICONDUCTOR
RoHS
NST200F120 / NST200F120-A
RoHS
Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.4
1.2
Qrr
trr
1.0
Fig.7 Maximum average forward current vs. case temperature
140
120
100
Duty cycle = 0.5
T
J
=175°C
Dynamic parameters, K f
(Normalized to 1000A/µs)
l F(AV) (A)
I
RRM
0.8
0.6
0.4
0.2
0.0
trr
80
60
40
20
0
25
50
Qrr
0
25
50
75
100
125
150
50
75
100
125
150
Junction temperature (°C),T
J
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
1200
Fig.9 Reverse recovery parameter test circuit
Junction capacitance, C J
1000
800
(pF)
600
400
200
V
R
= 200
V
0.01
Ω
L
= 70
µH
D.U.T.
dIF
/dt
adjust
D
G
IRFP250
S
0
6
10
reverse voltage (V), V
R
100 200
Fig.10 Reverse recovery waveform and definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dI
F
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
t
rr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
I
RRM
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by t
rr
and I
RRM
Qrr
=
t
rrx
l
RRM
2
(5)
dI
(rec)M
/dt -
peak rate of change of
current during t
b
portion of t
rr
Page4 of 5
SEMICONDUCTOR
RoHS
NST200F120 / NST200F120-A
RoHS
Nell High Power Products
SOT-227
38.30 (1.508)
37.80 (1.488)
?4.40 (0.173)
?4.20 (0.165)
3
4
x M4 nuts
-A-
4
6.25 (0.246)
12.50 (0.492)
2
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4
x
7.70 (0.303)
1
R full
25.70 (1.012)
25.20 (0.992)
-B-
Chamfer
2.00 (0.079)
x
45
0.25 (0.010)
M
C A
M
B
M
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
All dimensions in millimeters
(inches)
Notes
•
Dimensioning and toleranc ing per ANSI Y14.5M-1982
•
Controlling dime nsion: millimeter
ORDERING INFORMATION TABLE
Device code
N
1
ST
2
200
3
F
4
120
5
-
A
6
1
2
3
4
5
6
-
-
-
-
-
-
Nell High Power Products
Package indicator
(SOT-227)
Current rating
(200 = 200A,
100A x 2)
F = FRED
family
Voltage rating
(120 = 1200
V)
Circuit type, A for Anti-Parallel type
Blank for parallel type.
Page 5 of 5
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