EEWORLDEEWORLDEEWORLD

Part Number

Search

SBA4089Z

Description
DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
File Size507KB,7 Pages
ManufacturerRF Micro Devices (Qorvo)
Download Datasheet Compare View All

SBA4089Z Online Shopping

Suppliers Part Number Price MOQ In stock  
SBA4089Z - - View Buy Now

SBA4089Z Overview

DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBA4089Z
SBA4089Z
DCto5GHz, CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
Features
IP3=33.5dBm at 1950MHz
P
OUT
=13.3dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Applications
Gain and Return Loss vs Frequency
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
S21
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
dB
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
S22
S11
IF Amplifier
Wireless Data, Satellite
Terminals
1
2
3
4
Frequency (GHz)
5
6
Parameter
Small Signal Gain
Min.
13.5
13.1
Specification
Typ.
Max.
Unit
Condition
15.0
16.5
dB
850MHz
14.6
16.1
dB
1950MHz
Output Power at 1dB Compression
19.2
dBm
850MHz
17.5
19.0
dBm
1950MHz
Output Third Order Intercept Point
36.5
dBm
850MHz
31.5
33.5
dBm
1950MHz
Output Power
13.3
dBm
1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
4400
MHz
Return Loss>10dB
Input Return Loss
14.0
21.0
dB
1950MHz
Output Return Loss
11.0
15.0
dB
1950MHz
Noise Figure
4.8
5.8
dB
1950MHz
Device Operating Voltage
4.8
5.0
5.4
V
Device Operating Current
72
80
88
mA
Thermal Resistance (junction to lead)
70
°C/W
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39, T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111204
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SBA4089Z Related Products

SBA4089Z SBA-4089 SBA-4089Z
Description DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1702  1691  1857  661  2641  35  38  14  54  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号