DMP2022LSSQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
max
13mΩ @ V
GS
= -10V
-20V
16mΩ @ V
GS
= -4.5V
22mΩ @ V
GS
= -2.5V
I
D
max
T
A
= +25°
C
-9.3A
-8.3A
-7.2A
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074g (Approximate)
Applications
Backlighting
Power Management Functions
DC-DC Converters
SO-8
S
S
S
G
D
D
D
D
Top View
Top View
Internal Schematic
Ordering Information
(Note 5)
Part Number
DMP2022LSSQ-13
Notes:
Compliance
Automotive
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
P2022LS
C3025LS
YY WW
1
4
= Manufacturer’s Marking
P2022LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
DMP2022LSSQ
Document number: DS36875 Rev. 2 - 2
1 of 7
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July 2018
© Diodes Incorporated
DMP2022LSSQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-20
±12
-9.3
-7.4
-35
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J,
T
STG
Value
1.6
74
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 8)
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
V
SD
C
iss
C
oss
C
rss
R
G
Min
-20
-0.6
-0.5
Typ
-0.77
8
11
17
28
-0.68
2575
326
261
10.9
28.1
60.2
5.9
7.4
4.5
3.3
197
60.5
Max
-1
100
-1.1
13
16
22
-1.2
S
V
pF
pF
pF
Ω
V
GS
= 0V, V
DS
= 0V, f = 1MHz
V
DS
= -10V, V
GS
= -4.5V, I
D
= -10A
V
DS
= -10V, V
GS
= -10V, I
D
= -10A
V
DS
= -10V, V
GS
= -10V, I
D
= -10A
V
DS
= -10V, V
GS
= -10V, I
D
= -10A
V
DD
= -15V, I
D
= -1A, V
GS
= -10V,
R
GEN
= 6Ω
V
DS
= -10V, V
GS
= 0V
f = 1MHz
mΩ
Unit
V
µA
nA
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -9A
V
GS
= -2.5V, I
D
= -8A
V
DS
= -10V, I
D
= -10A
V
GS
= 0V, I
S
= -3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
6.
7.
8.
9.
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
15
20
216
153
ns
nC
Device mounted on 2 oz. Copper pads on FR-4 PCB.
Pulse width
10µS,
Duty Cycle
1%.
Short duration pulse test used to minimize self-heating effect.
Guaranteed by design. Not subject to product testing.
DMP2022LSSQ
Document number: DS36875 Rev. 2 - 2
2 of 7
www.diodes.com
July 2018
© Diodes Incorporated
DMP2022LSSQ
30
28
26
24
-I
D
, DRAIN CURRENT (A)
V
GS
= -10V
V
GS
= -4.5V
30
V
DS
= -5.0V
25
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.0V
V
GS
= -3.5V
V
GS
= -3.0V
V
GS
= -2.5V
V
GS
= -2.0V
22
20
18
16
14
12
10
8
6
4
2
0
0
20
15
10
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
5
V
GS
= -1.6V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
0
0.5
1.5
2
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= -10A
1
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.02
0.018
V
GS
= -2.5V
0.03
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0
I
D
= -9A
I
D
= -8A
0.016
0.014
0.012
V
GS
= -4.5V
0.01
V
GS
= -10V
0.008
0.006
0.004
2
4
6
8
10 12 14 16 18
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
2
4
6
8
10
-V
GS
, GATE SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
12
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.014
V
GS
= -10V
T
A
= 150
C
1.6
V
GS
= -4.5V
I
D
= -9A
0.012
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
= 125
C
T
A
= 85
C
1.4
V
GS
= -10V
I
D
= -10A
0.01
T
A
= 25
C
1.2
V
GS
= -2.5V
I
D
= -8A
0.008
T
A
= -55
C
1
0.006
0.8
0.004
1
3
5
7
9 11 13 15 17 19
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
21
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP2022LSSQ
Document number: DS36875 Rev. 2 - 2
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July 2018
© Diodes Incorporated
DMP2022LSSQ
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.024
1.4
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A 1.2
T
L
O
V
D
L
1
O
H
S
E
R
H 0.8
T
E
T
A
G
,
H
)
0.6
T
V
(
S
G
0.022
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= -10V
I
D
= -10A
V
GS
= -4.5V
I
D
= -9A
V
GS
= -2.5V
I
D
= -8A
-I
D
= 1mA
-I
D
= 250µA
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
0.4
-50
30
28
24
22
20
18
16
14
12
10
8
6
4
2
0
0
T
A
= -55
C
T
A
= 125
C
T
A
= 150
C
T
A
= 85
C
C
T
, JUNCTION CAPACITANCE (pF)
26
-I
S
, SOURCE CURRENT (A)
C
iss
1000
T
A
= 25
C
C
oss
C
rss
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
0
2
6
8 10 12 14 16 18
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
4
20
10
1000
R
DS(ON)
Limited
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
100
-I
D
, DRAIN CURRENT (A)
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
D
I
-
6
V
DS
= -10V
I
D
= -10A
10
DC
P
W
= 10s
4
1
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
2
0.1
0
0
5 10 15 20 25 30 35 40 45 50 55 60 65
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
0.01
0.01
T
J(max)
= 150°
C
T
A
= 25°
C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP2022LSSQ
Document number: DS36875 Rev. 2 - 2
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July 2018
© Diodes Incorporated
DMP2022LSSQ
1
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
R
JA
(t) = r(t)
R
θJA
JA
θJA
(t) = r(t) *
* R
R
R
JA
92℃/W
/W
θJA
=
= 92癈
Duty Cycle, D
D = t1/
t2
Duty Cycle,
= t1 /
t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Figure 13 Transient Thermal Resistance
10
100
1000
0.001
0.00001
0.0001
DMP2022LSSQ
Document number: DS36875 Rev. 2 - 2
5 of 7
www.diodes.com
July 2018
© Diodes Incorporated
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