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2NS9S6

Description
HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
File Size120KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Compare View All

2NS9S6 Overview

HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS

^mi-Conductor <Piodueti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5986, 2N5987
2N5988
NPN
2N5989, 2N5991
HIGH POWER PLASTIC
COMPLEMENTARY SILICON POWER TRANSISTORS
... designed for use In general-purpose amplifier and switch
ing
circuits.
• Collector Base Voltage - VCBO = 60 Vdc - 2N6986. 2N5989
• 80 Vdc - 2N6987
- 100 Vdc
-
2N5988, 2N5991
• Collector-Emitter Voltage - VCEO - 40 Vdc - 2N5986, 2N5989
= eO Vdc - 2N5987
= 80 Vdc - 2N5988, 2N5991
• DC Current Gain -
hr-E = 20-120 9>lc-6-0 Adc
= 7.0 (Mini <s> Ic " 12
Me
• Collector-Emitter Saturation Voltage -
)
=
12 AMPERE
TOWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80 VOLTS
100 WATTS
°-
7 Vdc (Ma
*>
@
'C • 6.0 Adc
•MAXIMUM RATINGS
Bating
Collector-BaM Voltage
Collector-Emitter Voltage
F miller Basa Voltage
Collector Current - Continuous
Peak
Bale Current
Total Power Diisipationffl>TC • 25°C
Derate above 25°C
Operating and Storaoe Junction
Temperature flarigft
THERMAL CHARACTERISTICS
Cherecterirtic
Trivrrdal Hnittance, Junction ID COM
• Indicate* JEDEC R»ghiered Oiu
FIOUflE 1 -POWER DERATING
Symbol
«JC
Mm
1.25
2NS9S6
2N5988
Symfaal 2N5989 2N5987 2N5991
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCB
VCEO
VEB
ic
>B
60
4O
80
EO
5.0
too
80
12
20
4.0
FO
TJ, T,,,
100
08
-6510
'150
Wain
w/°c
°c
flu i
—LJL
STYlE ?;
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Unit
°C/W
NOTES:
1. DIM "D" UNCDNTflOtLEO IN ZON£ "H"
2. DIM "F"OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
< LEAOSV»ITHINOJ05"BADOFTnUE
POSITION (Tf) AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN
MAX
12.83
INCHES
MAX
\(
16. U
11
3?
3.1?
351
s
\
V
0.635
0.495
ES
T7T
OJM"
osoT
5.131
0.043
OjM}
<; ssc
T67
-
no?
TdiT
TYT
\
IMS
YP
W
S
1
6Q
BO
100
l!0
tl
131
4.70.
\
TC. CMC riMfIIATum I»C1
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

2NS9S6 Related Products

2NS9S6 2N5987 2N5989 2N5991
Description HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
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