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MDT10P53

Description
MDT10P53
File Size51KB,8 Pages
ManufacturerETC1
Download Datasheet View All

MDT10P53 Overview

MDT10P53

MDT10P53
1.
概述
这个
8
½基于
EPROM
微控制器是由完全
静态
COMS
技术设计,集高速、½积小、½功
耗和抗高噪声一½的芯片。
内存包括
1.0K
字节
EPROM
41
字节静
RAM。
2.
特点
如下是关于½硬件的一些特点:
u
完全
CMOS
静态设计
u
8
½数据总线
u
EPROM
大小:1K
u
内部
RAM
大小:47 字节(41 通用目的寄
存器,6 特殊寄存器)
u
36
条指令
u
14
½指令长度
u
2
级硬件堆栈
u
工½电压:2。5V――6。0V
u
工½频率:0~20MHZ
u
最短指令执行时间是在
20MHz
下除分支指
令外的所有单周期指令的
200ns
u
寻址方式包括直接,间接和相对寻址方式
u
上电复½(POR)
u
睡眠½功耗方式
u
5
种可选振荡器类型
INTRC-内部 4 MHz RC
振荡器
RC––––½价 RC
振荡器
LFXT–––½频晶½振荡器
XTAL–––标准晶½振荡器
HFXT–––高频晶½振荡器
u
3
种振荡器起动时间:
20 ms, 40 ms, 80 ms
u
8
½可编程分频器的
8
½实时时钟/记
数器(RTCC)
u
自振式看门狗定时器(WDT)
u
I/O
口电平变化可将
IC
从睡眠模式唤醒
3.
应用
MDT10P53
的应用范围从高速自动机½
(电½)
到½电源遥控发送/接收器,充电设备装½,
无线电通讯如遥控器、小型设备、玩具、½½
PC
外围等。
4.
引脚定义
MDT10P53A1P/MDT10P53A1S
VDD
PB5
PB4
PB3
VDD
OSC1
OSC2/PB4
PB3
VDD
PB5
PB4
/MCLR
VDD
OSC1
OSC2/PB4
/MCLR
1
2
3
4
1
2
3
4
1
2
3
4
1
2
3
4
8
7
6
5
8
7
6
5
8
7
6
5
8
7
6
5
VSS
PB0
PB1
PB2/RTCC
VSS
PB0
PB1
PB2/RTCC
VSS
PB0
PB1
PB2/RTCC
VSS
PB0
PB1
PB2/RTCC
MDT10P53A2P/MDT10P53A2S
MDT10P53A3P/MDT10P53A3S
MDT10P53A4P/MDT10P53A4S
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