D41D10 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> D41D10

D41D10: DescriptionRF POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size417KB，2 Pages; ManufacturerCentral Semiconductor

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D41D10 Overview

RF POWER TRANSISTOR

D41D10 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	75 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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D41D1

D41D2

D41D4

D41D5

D41D7 D41D13

D41D8 D41D14

D41D10

D41D11

w w w. c e n t r a l s e m i . c o m

PNP SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D41D series types

are PNP silicon power transistors designed for amplifier

and switching applications. The NPN complementary

types are the D40D series.

MARKING: FULL PART NUMBER

TO-202 CASE

D41D10

D41D11

D41D13

D41D14

MAXIMUM RATINGS:

(TC=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICES

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

D41D1

SYMBOL D41D2

VCES

VCEO

VEBO

ICM

TJ, Tstg

D41D4

D41D5

D41D7

D41D8

5.0

UNITS

°C

°C/W

1.0

1.5

6.25

-65 to +150

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCE=Rated VCES

VEB=5.0V

lC=10mA (D41D1, 2)

lC=10mA (D41D4, 5)

lC=10mA (D41D7, 8)

lC=10mA (D41D10, 11, 13, 14)

lC=500mA, IB=50mA (D41D1, 2, 4, 5)

lC=500mA, IB=50mA (D41D7, 8, 10, 11, 13, 14)

lC=500mA, IB=50mA

D41D1

D41D4

D41D7

D41D10

D41D13

MIN MAX

50 150

MAX

100

UNITS

0.5

1.0

1.5

hFE

VCE=2.0V, IC=100mA

VCE=2.0V, IC=1.0A

(Except D40D13, 14)

D41D2

MIN MAX

120 300

D41D5

D41D8

D41D11

D41D14

MIN MAX

120 360

R1 (23-January 2012)

D41D10 Related Products

	D41D10	D41D13	D41D4	D41D14	D41D2	D41D1	D41D7	D41D8	D41D5
Description	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli	compli	compli	compli	-	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	-	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	75 V	75 V	45 V	75 V	-	30 V	60 V	60 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	50	10	120	-	10	10	10	10
JEDEC-95 code	TO-202	TO-202	TO-202	TO-202	-	TO-202	TO-202	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	-	1	1	1	1
Number of terminals	3	3	3	3	-	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	-	PNP	PNP	PNP	PNP
surface mount	NO	NO	NO	NO	-	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	-	1	-	1	1	-	-

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