ZPtoauets., Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SILICON PLANAR PNP
BFX90
BFX91
HIGH-VOLTAGE AMPLIFIERS
The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec TO-18
(BFX 90) and Jedec TO-39 (BFX 91) metal cases.
Both devices feature high voltage, high gain, low noise and excellent current gain linearity
from 10 ^A to 50 mA.
ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
"c
Plot
T^.Tj
Collector-base voltage (l
e
=0)
Collector-emitter voltage (I
B
=0)
Emitter-base voltage (l
c
= 0)
Collector current
Total power dissipation at T
arnb
< 25 °C
for BFX 90
for BFX 91
at Tease < 25 °C
for BFX 90
for BFX 91
Storage and junction temperature
-180
-180
-6
-100
0.4
0.7
1.4
2.5
V
V
V
mA
W
W
W
W
°C
-55 to 200
MECHANICAL DATA
Collector connected to case
Collector connected to case
Dimensions in mm
-]';
H
(sim. to TO-18)
(sim. to
TO-39)
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets arc current before placing orders.
Quality Semi-Conductors
THERMAL DATA
Rth i-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
BFX90
125 °C/W
438 °C/W
BFX 91
70°C/W
250 °C/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C unless otherwise specified)
Parameter
ICBO
Collector cutoff
current (I
E
= 0)
Test conditions
Min. Typ. Max.
Unit
V
CB
= -100V
V
CB
=-100V
V
EB
= -4V
T
amb
=125°C
-0.2
-0.03
-10
-10
nA
AlA
IEBO
Emitter cutoff
current (l
c
= 0)
-0.2
-180
-10
nA
VIBRJCBO Collector-base
breakdown voltage
(I
E
=0)
V
CEO(5US)
Collector-emitter
sustaining voltage
(I
B
=0)
VIBRIEBO Emitter-base
breakdown voltage
(l
c
=0)
VcE(sat)* Collector-emitter
saturation voltage
V
BE(sat)
*
hpE
Base-emitter
saturation voltage
DC current gain
*
#
l
c
= -10;uA
V
l
c
= -2 mA
-180
V
IE =-10 MA
-6
V
l
c
=-10mA
I
B
= -1mA
-0.1 -0.25
-0.74 -0.9
60
80
80
15
110
170
200
60
90
V
V
l
c
= -10 mA I
B
= -1 mA
I
C
=-10MA
l
c
=-1 mA
l
c
=-10mA
l
c
=-10 jUA
T
an
,b= -55°C
l
c
=-100juA
Tamb=-55°C
V
C E
=-10V
V
C E
=-10V
V
C E
=~10V
V
CE
= -10V
V
c e
=-10V
30
V
CE
= -10V
100
V
ce
= -10V
40
300
-
h
fe
Small signal current
gain
Transition frequency
l
c
=-1 mA
f =1 kHz
l
c
= -1 mA
f
=20 MHz
400
60
_
f
T
160 MHz
ELECTRICAL CHARACTERISTICS
(continued)
Parameter
CEBO
Emitter-base
capacitance
Test conditions
Min. Typ. Max.
Unit
|
c
= 0
f = 1 MHz
V
EB
= -0.5V
20
V
C B
=-5V
5
V
C E
=-5V
B = 2kHz
B = 200 Hz
B=20Hz
1
1
2
2.5
3 dB
3 dB
10 dB
12
7
PF
25
pF
CCBO
Collector-base
capacitance
Noise figure
I
E
=0
f =1 MHz
I
C
=-10MA
R
g
= 10 kn
f =10 kHz
f = 1 kHz
f =100 Hz
IMF
h|
e
h
oe
Input impedance
Output admittance
J
e
= ?V?£
l
c
--1mA
f = 1 kHz
VcE=
-
10v
V
c e
=-10V
kn
piS'
5
25
stm32/stm8
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