BLA6H1011-600
LDMOS avionics power transistor
Rev. 01 — 22 April 2010
Product data sheet
1. Product profile
1.1 General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
°
C; t
p
= 50
μ
s;
δ
= 2 %; I
Dq
= 100 mA; in a class-AB production
test circuit.
Mode of operation
pulsed RF
f
(MHz)
1030 to 1090
V
DS
(V)
48
P
L
(W)
600
G
p
(dB)
17
η
D
(%)
52
t
r
(ns)
11
t
f
(ns)
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
voltage of 48 V, an I
Dq
of 100 mA, a t
p
of 50
μs
with
δ
of 2 %:
Output power = 600 W
Power gain = 17 dB
Efficiency = 52 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLA6H1011-600
LDMOS avionics power transistor
1.3 Applications
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
1
2
5
Graphic symbol
1
3
3
4
4
5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLA6H1011-600
-
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Version
SOT539A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
−65
-
Max
100
13
72
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-case)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
°C;
P
L
= 600 W
t
p
= 100
μs; δ
= 10 %
t
p
= 50
μs; δ
= 2 %
BLA6H1011-600_1
All information provided in this document is subject to legal disclaimers.
Typ
0.06
Unit
K/W
0.035 K/W
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2010
2 of 13
NXP Semiconductors
BLA6H1011-600
LDMOS avionics power transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
°
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 270 mA
Min
100
1.25
-
32
-
1.6
-
Typ
-
1.8
-
42
-
3
100
Max Unit
-
1.4
-
140
-
169
V
μA
A
nA
S
mΩ
2.25 V
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.5 A
Table 7.
RF characteristics
Mode of operation: pulsed RF; t
p
= 50
μ
s;
δ
= 2 %; RF performance at V
DS
= 48 V; I
Dq
= 100 mA;
T
case
= 25
°
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
P
L
V
DS
G
p
RL
in
P
L(1dB)
η
D
P
droop(pulse)
t
r
t
f
Parameter
output power
drain-source voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
Conditions
Min Typ Max Unit
600
-
16
8
-
47
-
-
-
-
-
17
12
700
52
0
11
5
-
48
-
-
-
-
0.3
30
30
W
V
dB
dB
W
%
dB
ns
ns
6.1 Ruggedness in class-AB operation
The BLA6H1011-600 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
DS
= 48 V;
I
Dq
= 100 mA; P
L
= 600 W; t
p
= 50
μs; δ
= 2 %; f = 1030 MHz.
BLA6H1011-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2010
3 of 13
NXP Semiconductors
BLA6H1011-600
LDMOS avionics power transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
MHz
1030
1060
1090
Z
S
Ω
1.702
−
j1.816
1.815
−
j1.760
1.912
−
j1.751
Z
L
Ω
0.977 + j0.049
1.033 + j0.221
1.086 + j0.379
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.2 Performance curves
20
G
p
(dB)
16
001aal832
60
η
D
(%)
40
001aal833
(1)
(2)
(1)
(2)
12
8
20
4
0
0
300
600
P
L
(W)
900
0
0
200
400
600
P
L
(W)
800
T
h
= 25
°C;
V
DS
= 48 V; I
Dq
= 100 mA; t
p
= 50
μs;
δ
= 2 %.
(1) f = 1030 MHz
(2) f = 1090 MHz
T
h
= 25
°C;
V
DS
= 48 V; I
Dq
= 100 mA; t
p
= 50
μs;
δ
= 2 %.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 2.
Power gain as a function of load power;
typical values
Fig 3.
Drain efficiency as a function of load power;
typical values
BLA6H1011-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2010
4 of 13
NXP Semiconductors
BLA6H1011-600
LDMOS avionics power transistor
20
RL
in
(dB)
16
001aal834
800
P
L
(W)
600
(1)
001aal835
(2)
12
400
8
200
4
0
1025
0
1035
1045
1055
1065
1075
1085 1095
f (MHz)
0
6
12
P
i
(W)
18
T
h
= 25
°C;
P
L
= 600 W; V
DS
= 48 V; I
Dq
= 100 mA;
t
p
= 50
μs; δ
= 2 %.
T
h
= 25
°C;
V
DS
= 48 V; I
Dq
= 100 mA; t
p
= 50
μs;
δ
= 2 %.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 4.
Input return loss as a function of frequency;
typical values
Fig 5.
Load power as a function of input power;
typical values
20
G
p
(dB)
16
001aal836
60
η
D
(%)
001aal837
(1)
(2)
(1)
40
12
(2)
8
20
4
0
0
200
400
600
P
L
(W)
800
0
0
200
400
600
P
L
(W)
800
T
h
= 65
°C;
V
DS
= 48 V; I
Dq
= 100 mA; t
p
= 50
μs;
δ
= 2 %.
(1) f = 1030 MHz
(2) f = 1090 MHz
T
h
= 65
°C;
V
DS
= 48 V; I
Dq
= 100 mA; t
p
= 50
μs;
δ
= 2 %.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 6.
Power gain as a function of load power;
typical values
Fig 7.
Drain efficiency as a function of load power;
typical values
BLA6H1011-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2010
5 of 13
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