LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +25°C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
V
GSS
= 40V
V
GDS
= 40V
* For equivalent single version, see LSK170 family
I
G(F)
= 10mA
400mW
-65 to +150°C
-55 to +135°C
e
n
= 0.9nV/√Hz (typ)
I
V
GS1-2
I
= 20mV max
BV
GSS
= 40V max
G
fs
= 20mS (typ)
25pF typ
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
TO-71
Top View
SOIC-A
Top View
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
V
GS1
V
GS2
I
DSS1
I
DSS2
CHARACTERISTIC
Differential Gate to Source Cutoff
Voltage
Gate to Source Saturation Current Ratio
MIN
TYP
MAX
20
UNITS
m
V
CONDITIONS
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, V
GS
= 0V
0.9
---
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(OFF)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
LSK389A
I
DSS
Drain to Source Saturation
Current
LSK389B
LSK389C
LSK389D
I
GSS
I
G1G2
Gate to Source Leakage Current
Gate to Gate Isolation Current
MIN
-40
-0.15
2.6
6
10
17
-2
6.5
12
20
30
-200
±1.0
pA
µA
V
GS
= -30V, V
DS
= 0
V
G1
-
G2
= ±45V, I
D
= I
S
= 0A
mA
V
DS
= 10V, V
GS
= 0
TYP
MAX
UNITS
V
V
CONDITIONS
V
DS
= 0, I
D
= -100µA
V
DS
= 10V, I
D
= 0.1µA
Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201122
5/02/2014 Rev#A7 ECN# LSK389
ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated)
SYMBOL
G
fs
e
n
e
n
C
ISS
C
RSS
CHARACTERISTIC
Full Conduction Transconductance
Noise Voltage
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
MIN
8
TYP
20
0.9
2.5
25
5.5
1.9
4
MAX
UNITS
mS
Nv/√Hz
Nv/√Hz
pF
pF
CONDITIONS
V
DS
= 10V, V
GS
= 0,
f
= 1kHz
V
DS
= 10V, I
D
= 2mA,
f
= 1kHz,
NBW = 1Hz
V
DS
= 10V, I
D
= 2mA,
f
= 10Hz,
NBW = 1Hz
V
DS
= 10V, V
GS
= 0,
f
= 1MHz,
V
DG
= 10V, I
D
= 0,
f
= 1MHz,
ORDERING INFORMATION
LSK389 - A - SOIC-8
I
DSS
Range
A
B
C
D
2.6 - 6.5 mA
6 - 12 mA
10 - 20 mA
17 - 30 mA
Package
TO-71 6L
SOIC-A 8L
TO-71
SOIC-8
PACKAGE DIMENSIONS
TO-71
SOIC-A
0.210
0.170
Note: All Dimensions in inches
NOTES:
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201122
5/02/2014 Rev#A7 ECN# LSK389
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