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1N5355B

Description
18 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size343KB,3 Pages
ManufacturerETC2
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1N5355B Overview

18 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

1N5333B thru 1N5363B
Transient Voltage Suppressor
Breakdown Voltage 3.3 to 30 Volts
CASE: R-6
Features
Extensive Voltages selection from 3.3 to 30V
Silicon 5.0 Watt Zener Diodes
Hermetically sealed glass body construction
Withstands surge stresses
Application
Voltage stabilization
Regulates voltage over a broad operating current
and temperature range
Flexible axial-lead mounting terminals
High specified maximum current (I
ZM
) when
adequately heat sunk
Minimal changes of voltage versus current as
specified by voltage regulation(△V
Z
)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
M(AV)
V
F
R
θJL
R
θJA
T
J,
T
STG
Conditions
Mechanical Data
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Part number
Polarity:
Cathode indicated by band
Weight:
2.1g(Approximately)
25 C unless otherwise specified
O
Value
5.0
1.47
1.2
25
85
-65 to +150
Unit
W
W
V
℃/W
℃/W
Steady state power at T
L
≤ 25℃ 0.375”(10mm) from body
Steady state power at T
A
=25℃ when mounted on FR4 PC described for
thermal resistance (also see Fig.1)
Maximum instantaneous forward voltage at 1.0A
Thermal resistance junction to lead
Thermal resistance junction to ambient
Operating and Storage Temperature
Document Number: 1N5333B thru 1N5363B
Feb.29, 2012
www.smsemi.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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