Technical Data Sheet
Pb Free
Specification
HBTGFR421-KR
SSC
Drawn
Approval
Customer
Approval
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
1.
2.
3.
4.
5.
6.
7.
8.
9.
Rank
[ Contents ]
Description
Absolute maximum ratings
Electro-Optical characteristics
Characteristic diagrams
Reliability result
Outline Dimension
Material
Reel Structure
10. Packing
11. Soldering profile
12. Precaution for Use
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
HBTGFR421-KR
1. Description
-
Small size suitable for compact
appliances.
-
Surface-mounted chip LED
device.
HBTGFR421-KR
Features
•
•
•
1.6 X 1.5 X 0.5 mm
Untited, Diffused flat mold
Wavelength :
-. Red : 625 nm
-
Pb-free and RoHS complaint
component.
-. Green : 525 nm
-. Blue : 472 nm
-
-
-
High brightness, High efficiency
Tape and Reel packing.
Increases the life time of battery.
Applications
Cellular phone’s keypad
lightning
Information Boards
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
2. Absolute maximum ratings
Value
Parameter
Power Dissipation
Forward Current
Peak Forward Current
Operating Temperature
Storage Temperature
Symbol
Red
P
d
I
F
I
FM *1
T
opr.
T
stg.
69
30
100
Green
66
20
50
-40 ~ 85
-40 ~ 100
Blue
66
20
50
(Ta=25℃)
Unit
mW
mA
mA
℃
℃
*1 I
FM
conditions: Pulse width Tw≤ 1msec and Duty ratio≤1/10.
3. Electro-Optical Characteristics
Parameter
Forward
Voltage
Reverse
Current
Luminous
Intensity
*2
color
Red
Green
Blue
R/G/B
Red
Green
Blue
Red
Wavelength
Green
Blue
Red
Spectral
Bandwidth
Viewing
Angle
*3
Green
Blue
R,G,B
2θ
1/2
I
F
=30
㎃
(total)
-
Δλ
I
F
=10
㎃
λ
d
I
F
=20
㎃
I
V
I
F
=10
㎃
I
R
V
R
=5V
V
F
I
F
=10
㎃
Symbol
Condition
Min
1.7
2.7
2.7
-
50
90
25
615
515
465
Typ
1.9
3.1
3.0
-
70
220
50
625
525
472
15
30
20
120
(Ta=25℃)
Max
2.3
3.3
3.3
10
90
270
85
635
535
477
nm
mcd
㎂
V
Unit
nm
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
*3
θ1/2
is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] Tolerance : Iv
±
10%,
λ
D
±
2nm, , V
F
±
0.1V
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Forward Current I
F
[mA]
Relative Intensity I
V
[%]
Forward current I
F
(mA)
Intensity[a.u.]
Technical Data Sheet
4. Characteristic Diagrams
Ta = 25
o
Forward Current vs.
Forward Voltage
100
Relative Luminous Intensity
vs. Forward Current
180
160
140
120
100
80
60
40
10
1
RED
GREEN
BLUE
0.1
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
20
0
0
5
10
15
20
25
30
RED
GREEN
BLUE
35
40
Forward Voltage V
F
[V]
Forward Current I
F
[mA]
Forward Current vs.
Ambient Temperature (per die)
40
Spectrum
1.0
Red
30
0.8
0.6
0.4
0.2
20
Blue / Green
10
0
-25
0
25
50
o
75
100
0.0
300
400
Ambient temperature Ta( C)
500
600
700
Wavelength [nm]
800
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
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