Green
ZXTP19100CG
100V PNP MEDIUM POWER TRANSISTOR IN SOT223
Features
BV
CEO
> -100V
BV
ECO
> -7V
I
C
= -2A High Continuous Current
Low Saturation Voltage V
CE(sat)
< -130mV @ -1A
R
CE(sat)
= 100mΩ
Complementary NPN Type: ZXTN19100CG
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Motor Drive
High Side Driver
SOT223
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXTP19100CGTA
Notes:
Compliance
AEC-Q101
Marking
ZXTP19100C
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXTP19
100C
ZXTP19100C = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
YWW
ZXTP19100CG
Document Number DS33738 Rev. 2 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXTP19100CG
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (forward blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
Value
-110
-110
-100
-7
-7
-2
-1
-3
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
1.2
9.6
1.6
12.8
3
24
5.3
42
104
78
42
23.5
16
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 8 measured at t<5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP19100CG
Document Number DS33738 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXTP19100CG
Thermal Characteristics and Derating Information
(@T
A
= +25°C, unless otherwise specified.)
1m
-I
C
Collector Current (A)
1
DC
1s
100ms
10ms
- I
C
Collector Current (A)
V
CE(sat)
Limited
Failure may occur
in this region
BV
CEO
=100V
100µ
10µ
100m
1µ
BV
CEX
=110V
T
amb
=25°C
Single Pulse T
amb
=25°C
50mm x 50mm 2oz
1
1ms
100µs
10m
100m
10
100
90
100
110
120
-V
CE
Collector-Emitter Voltage (V)
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Thermal Resistance (°C/W)
Safe Operating Area
40
30
50mm x 50mm 2oz
Single Pulse T
amb
=25°C
Maximum Power (W)
100
50mm x 50mm 2oz
D=0.5
20
D=0.2
Single Pulse
D=0.05
10
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
3.0
2.5
2.0
25mm x 25mm 1oz
50mm x 50mm 2oz
Pulse Power Dissipation
1.5
1.0
0.5
0.0
0
15mm x 15mm 1oz
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
ZXTP19100CG
Document Number DS33738 Rev. 2 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXTP19100CG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
CEX
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
Min
-110
-100
-110
-7
-7
-7
200
70
20
Typ
-135
-135
-130
-8.3
-8.7
-8.3
< 1
<1
-100
-100
-180
-220
-890
-840
300
130
28
142
291
23.5
24.7
22.4
660
107
Max
-50
-0.5
-50
-130
-125
-230
-295
-1,000
-950
500
400
40
V
V
V
nA
µA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Unit
V
V
Test Condition
I
C
= -100µA
I
C
= -10mA
I
C
= -100µA
I
C
= -100µA, R
BC
<1kΩ or
0.25V< V
BC
> -0.25V
I
E
= -100µA
I
E
= -100µA
V
CB
= -110V
V
CB
= -110V, T
A
= +100°C
V
EB
= -5.6V
I
C
= -500mA, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -50mA
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -200mA
I
C
= -2A, V
CE
= -2V
I
C
= -100mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
V
CE
= -10V, I
C
= -100mA,
f = 50MHz
V
EB
= -0.5V, f = 1MHz
V
CB
= -10V, f = 1MHz
I
C
= -500mA, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
R
b
= 100
W
, R
c
= 20
W
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Base Breakdown Voltage
(forward blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Current Gain-Bandwidth Product (Note 11)
Input Capacitance (Note 11)
Output Capacitance (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTP19100CG
Document Number DS33738 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXTP19100CG
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
T
A
=25°C
I
C
/I
B
=50
0.4
I
C
/I
B
=10
0.3
- V
CE(SAT)
(V)
100m
I
C
/I
B
=20
- V
CE(SAT)
(V)
0.2
150°C
100°C
25°C
0.1
I
C
/I
B
=10
10m
1m
10m
100m
1
10
0.0
10m
-55°C
100m
1
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
-55°C
1.6
V
CE
=2V
150°C
100°C
600
500
1.0
I
C
/I
B
=10
Normalised Gain
400
300
200
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55°C
25°C
- V
BE(SAT)
(V)
1.2
Typical Gain (hFE)
1.4
0.8
0.6
100°C
150°C
0.4
25°C
100
0
0.2
1m
10m
100m
1
- I
C
Collector Current (A)
h
FE
v I
C
- I
C
Collector Current (A)
V
BE(SAT)
v I
C
1.2
V
CE
=2V
25°C
400
350
f = 1MHz
-55°C
Capacitance (pF)
1.0
300
250
200
150
100
50
0
10m
100m
1
10
Cobo
Cibo
- V
BE(ON)
(V)
0.8
0.6
150°C
0.4
100°C
0.2
1m
10m
100m
1
100
- I
C
Collector Current (A)
- Voltage(V)
V
BE(ON)
v I
C
Capacitance v Voltage
ZXTP19100CG
Document Number DS33738 Rev. 2 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
