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BFR106

Description
Low Noise Figure
File Size182KB,5 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BFR106 Overview

Low Noise Figure

INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFR106
DESCRIPTION
·Low
Noise Figure
NF = 2.5 dB TYP. @V
CE
= 8 V, I
C
= 20 mA, f = 900 MHz
·High
Gain
S
21e
2
= 10.5 dB TYP. @V
CE
= 8 V,I
C
= 70 mA,f = 900 MHz
APPLICATIONS
·Designed
for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CES
Collector-Emitter Voltage
20
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
100
mA
I
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
12
mA
P
C
0.7
W
T
J
150
T
stg
Storage Temperature Range
-65~150
isc website:www.iscsemi.cn
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