FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
April 2013
FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High-Temperature Phototransistor
Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Features
■
Utilizing Proprietary Process Technology to Achieve
■
Description
In the OptoHiT™ series, the FODM8801 is a first-of-kind
phototransistor,
utilizing
Fairchild’s
leading-edge
proprietary process technology to achieve high operating
temperature characteristics, up to 125°C. The opto-
coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light-emitting diode (LED) optically
coupled to a phototransistor, available in a compact half-
pitch, mini-flat, 4-pin package. It delivers high current
transfer ratio at very low input current. The input-output
isolation voltage, V
ISO
, is rated at 3750 VAC
RMS
.
■
■
■
■
High Operating Temperature: up to 125°C
Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
– Excellent CTR Linearity at High-Temperature
– CTR at Very Low Input Current, I
F
High Isolation Voltage Regulated by Safety Agency:
C-UL / UL1577, 3750 VAC
RMS
for 1 minute and
DIN EN/IEC60747-5-5
Compact Half-Pitch, Mini-Flat, 4-Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff
Height)
> 5mm Creepage and Clearance Distance
Applicable to Infrared Ray Reflow, 245°C
Applications
■
Primarily Suited for DC-DC Converters
■
Ground-Loop Isolation, Signal-Noise Isolation
■
Communications – Adapters, Chargers
■
Consumer – Appliances, Set-Top Boxes
■
Industrial – Power Supplies, Motor Control,
Programmable Logic Control
Schematic
Package
ANODE
1
4
COLLECTOR
CATHODE
2
3
EMITTER
Figure 2. Half-Pitch Mini-Flat
Figure 1. Schematic
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Safety and Insulation Ratings for Half-Pitch Mini-Flat Package
As per DIN EN/IEC 60747-5-5. This optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For rated main voltage < 150 Vrms
For rated main voltage < 300 Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-III
40/125/21
2
175
1060
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
VIORM x 1.875 = V
PR
,100% Production Test with
t
m
= 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
VIORM x 1.5 = V
PR
,Type and Sample Test with
t
m
= 60 sec, Partial Discharge < 5pC
Max Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation thickness
Safety Limit Values- Maximum Values allowed in the
event of a failure,
V
PR
848
V
peak
V
IORM
V
IOTM
565
4000
5
5
0.5
V
peak
V
peak
mm
mm
mm
T
S
I
S,INPUT
R
IO
Case Temperature
Input Current
150
200
300
10
9
°
C
mA
mW
Ω
P
S,OUTPUT
Output Power
Insulation Resistance at T
S
,V
IO
=500 V
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
2
FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified
Symbol
TOTAL PACKAGE
T
STG
T
OPR
T
J
T
SOL
EMITTER
I
F(average)
V
R
PD
LED
DETECTOR
I
C(average)
V
CEO
V
ECO
PD
C
Storage Temperature
Operating Temperature
Junction Temperature
Parameter
Value
-40 to +150
-40 to +125
-40 to +140
260 for 10 s
Units
°C
°C
°C
°C
Lead Solder Temperature
(Refer to Reflow Temperature Profile on page 13)
Continuous Forward Current
Reverse Input Voltage
Power Dissipation
(1)(3)
Continuous Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Power Dissipation
(2)(3)
20
6
40
30
75
7
150
mA
V
mW
mA
V
V
mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
T
A
V
FL(OFF)
I
FH
Operating Temperature
Input Low Voltage
Parameter
Value
-40 to +125
-5.0 to +0.8
1 to 10
Units
°C
V
mA
Input High Forward Current
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Notes:
1. Derate linearly from 73˚C at a rate of 0.24 mW/˚C
2. Derate linearly from 73˚C at a rate of 2.23 mW/˚C.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions
outside these ratings.
4. Device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
5. 3,750 VAC
RMS
for 1 minute is equivalent to 4,500 VAC
RMS
for 1 second.
Parameter
Test Conditions
Min.
3,750
10
12
Typ.
Max.
Unit
Vac
RMS
Ω
Input-Output Isolation Voltage f = 60 Hz, t = 1 min., I
≤
10 µA
(4)(5)
I-O
Isolation Resistance
Isolation Capacitance
V
I-O
= 500 V
(4)
f = 1 MHz
0.3
0.5
pF
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
3
FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Electrical Characteristics
Apply over all recommended conditions (T
A
= -40°C to +125°C unless otherwise specified).
All typical values are measured at T
A
= 25°C.
Symbol
EMITTER
V
F
Δ
V
F
/
Δ
T
A
I
R
C
T
DETECTOR
BV
CEO
BV
ECO
I
CEO
Parameter
Conditions
Min.
Typ.
Max.
Units
Forward Voltage
Forward-Voltage Coefficient
Reverse Current
Terminal Capacitance
I
F
= 1 mA
I
F
= 1 mA
V
R
= 6 V
V = 0 V, f = 1 MHz
1.00
1.35
-1.6
1.80
V
mV /
°
C
10
30
µA
pF
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector Dark Current
I
C
= 0.5 mA, I
F
= 0 mA
I
E
= 100 µA, I
F
= 0 mA
V
CE
= 75 V,
I
F
= 0 mA,
T
A
= 25
°
C
V
CE
= 50 V, I
F
= 0 mA
V
CE
= 5 V, I
F
= 0 mA
75
7
130
12
100
50
30
8
V
V
nA
µA
µA
pF
C
CE
Capacitance
V
CE
= 0 V, f = 1 MHz
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
4
FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Transfer Characteristics
Apply over all recommended conditions (T
A
= -40°C to +125°C unless otherwise specified).
All typical values are measured at T
A
= 25°C.
Symbol
CTR
CE
Parameter
Device
Conditions
I
F
= 1.0 mA, V
CE
= 5 V
@ T
A
= 25°C
I
F
= 1.0 mA, V
CE
= 5 V
I
F
= 1.6 mA, V
CE
= 5 V
I
F
= 3.0 mA, V
CE
= 5 V
Min.
80
35
40
45
130
65
70
75
200
100
110
115
65
30
25
20
90
45
40
35
140
75
65
55
Typ.
120
120
125
138
195
195
202
215
300
300
312
330
108
108
104
92
168
168
155
132
238
238
215
177
0.17
0.16
0.15
0.17
0.16
0.16
0.18
0.17
0.17
Max.
160
230
Units
%
%
%
%
FODM8801A
Current Transfer
Ratio
(Collector-Emitter)
FODM8801B
I
F
= 1.0 mA, V
CE
= 5 V
@ T
A
= 25°C
I
F
= 1.0 mA, V
CE
= 5 V
I
F
= 1.6 mA, V
CE
= 5 V
I
F
= 3.0 mA, V
CE
= 5 V
260
360
%
%
%
%
FODM8801C
I
F
= 1.0 mA, V
CE
= 5 V
@ T
A
= 25°C
I
F
= 1.0 mA, V
CE
= 5 V
I
F
= 1.6 mA, V
CE
= 5 V
I
F
= 3.0 mA, V
CE
= 5 V
400
560
%
%
%
%
CTR
CE(SAT)
Saturated Current FODM8801A
Transfer Ratio
(Collector-Emitter)
I
F
= 1.0 mA, V
CE
= 0.4 V
@ T
A
= 25°C
I
F
= 1.0 mA, V
CE
= 0.4 V
I
F
= 1.6 mA, V
CE
= 0.4 V
I
F
= 3.0 mA, V
CE
= 0.4 V
150
%
%
%
%
FODM8801B
I
F
= 1.0 mA, V
CE
= 0.4 V
@ T
A
= 25°C
I
F
= 1.0 mA, V
CE
= 0.4 V
I
F
= 1.6 mA, V
CE
= 0.4 V
I
F
= 3.0 mA, V
CE
= 0.4 V
245
%
%
%
%
FODM8801C
I
F
= 1.0 mA, V
CE
= 0.4 V
@ T
A
= 25°C
I
F
= 1.0 mA, V
CE
= 0.4 V
I
F
= 1.6 mA, V
CE
= 0.4 V
I
F
= 3.0 mA, V
CE
= 0.4 V
380
%
%
%
%
V
CE(SAT)
Saturation Voltage FODM8801A
I
F
= 1.0 mA, I
C
= 0.3 mA
I
F
= 1.6 mA, I
C
= 0.4 mA
I
F
= 3.0 mA, I
C
= 0.6 mA
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
V
V
V
V
V
V
V
V
V
FODM8801B
I
F
= 1.0 mA, I
C
= 0.45 mA
I
F
= 1.6 mA, I
C
= 0.6 mA
I
F
= 3.0 mA, I
C
= 1.0 mA
FODM8801C
I
F
= 1.0 mA, I
C
= 0.75 mA
I
F
= 1.6 mA, I
C
= 1.0 mA
I
F
= 3.0 mA, I
C
= 1.6 mA
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
5
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