FLM0910-12F
X-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=40.5dBm(Typ.)
・High
Gain: G1dB=7.0dB(Typ.)
・High
PAE:
ηadd=25%(Typ.)
・Broad
Band: 9.5~10.5GHz
・Impedance
Matched Zin/Zout = 50Ω
・Hermetically
Sealed Package
DESCRIPTION
The FLM0910-12F is a power GaAs FET that is internally matched
for standard communication and radar bands to provide optimum
power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
PTot
T
stg
T
ch
Rating
15
-5
57.6
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
°
C)
Item
DC Input Voltage
Gate Current
Gate Current
Symbol
V
DS
I
GS
I
GR
R
G
=50Ω
R
G
=50Ω
Condition
Limit
Unit
V
mA
mA
≤
10
≤
32.0
≥
-5.6
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=3.6A
V
DS
=5V, I
DS
=300mA
I
GS
=-340uA
V
DS
=10V
f=9.5 - 10.5 GHz
I
DS
=0.5Idss (typ.)
Zs=Z
L
=50
Ω
Min.
-
-
-0.5
-5.0
39.5
6.0
-
-
-
Limit
Typ.
6.0
5000
-1.5
-
40.5
7.0
3.5
25
-
2.3
-
Max.
9.0
-
-3.0
-
-
-
4.5
-
1.2
2.6
80
Unit
A
mS
V
V
dBm
dB
A
%
dB
o
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
η
add
∆G
R
th
∆T
ch
Channel to Case
10V X Idsr X Rth
-
-
C/W
o
C
CASE STYLE: IB
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Note:RF-Test is measured with Vgs-Constant Circuit.
ESD
Edition 1.2
September 2004
Class
Ⅲ
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
1
FLM0910-12F
X-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
Vds=10V, Ids=0.5IDSS
60
Total Power Dissipation [W]
50
42
40
Output power [dBm]
38
36
34
32
30
P.A.E.
Pout
70
Power Added Efficiency [%}
60
50
40
30
20
10
0
20
22
24
26
28
30
32
34
36
Input power [dBm]
40
30
20
10
0
0
50
100
150
200
28
Case Temperature [degree C]
OUTPUT POWER vs. INPUT POWER
Vds=10V, Ids=0.5IDSS
42
Pin=35dBm
40
Output power [dBm]
38
36
34
Pin=33dBm
Pin=30dBm
Pin=
26dBm
32
30
Pin=22dBm
28
9
9.5
10
Input power[dBm]
10.5
11
P1dB
2
FLM0910-12F
X-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do
not put these products into the mouth.
・Do
not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe
government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
TEL +81-45-853-8156
FAX +81-45-853-8170
5
京公网安备 11010802033920号
EEWORLD
